Presentation 2000/8/18
ED2000-127 / SDM2000-109 / ICD-2000-63 0.5-1 V2-GHz RF Front-end Circuits in CMOS/SIMOX
Mitsuru Harada, Tsuneo Tsukahara, Jun-ichi Kodate, Akihiro Yamagishi, Junzo Yamada,
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Abstract(in English) We have developed low-power RF circuits operating at extremely low voltages down to 0.5 V. The supply voltage was reduced by TCS(Tank-Current-Sourcing)technique using on-chip LC resonators. A novel buffer circuit made of undoped-channel MOSFETs is used. RF front-end circuits fabricated in CMOS/SOI had the total power dissipation as low as 9 mW.
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Keyword(in English) CMOS / SF circuits / SOI / Low-voltage circuits
Paper # ED2000-127,SDM2000-109,ICD-2000-63
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Conference Date 2000/8/18(1days)
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Registration To Integrated Circuits and Devices (ICD)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) ED2000-127 / SDM2000-109 / ICD-2000-63 0.5-1 V2-GHz RF Front-end Circuits in CMOS/SIMOX
Sub Title (in English)
Keyword(1) CMOS
Keyword(2) SF circuits
Keyword(3) SOI
Keyword(4) Low-voltage circuits
1st Author's Name Mitsuru Harada
1st Author's Affiliation NTT Telecommunications Energy Laboratories()
2nd Author's Name Tsuneo Tsukahara
2nd Author's Affiliation NTT Telecommunications Energy Laboratories
3rd Author's Name Jun-ichi Kodate
3rd Author's Affiliation NTT Telecommunications Energy Laboratories
4th Author's Name Akihiro Yamagishi
4th Author's Affiliation NTT Telecommunications Energy Laboratories
5th Author's Name Junzo Yamada
5th Author's Affiliation NTT Telecommunications Energy Laboratories
Date 2000/8/18
Paper # ED2000-127,SDM2000-109,ICD-2000-63
Volume (vol) vol.100
Number (no) 270
Page pp.pp.-
#Pages 7
Date of Issue