Presentation 2000/1/21
A 3.2-V Operation HBT-MMIC Power Amplifier for GSM/DCS Applications
Kazuya YAMAMOTO, Teruyuki SHIMURA, Tomoyuki ASADA, Toshio OKUDA, Kazutomi MORI, Kenichiro CHOUMEI, Satoshi SUZUKI, Takeshi MIURA, Shinichi FUJIMOTO, Ryo HATTORI, Hirofumi NAKANO, Kenji HOSOGI, Jun OTSUJI, Akira INOUE, Koutarou YAJIMA, Toshio OGATA, Yukio MIYAZAKI, Masahide YAMANOUCHI,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) This report describes the design and experimental results of a 3.2-V operation single-chip AlGaAs / GaAs HBT MMIC power amplifier for GSM / DCS dual-band applications, featuring an on-chip bias switch which switches in turn the amplifiers between 900 MHz and 1800 MHz bands. Since the bias switch has no use of a stacked configuration, it can operate on a low supply voltage of 3.0 V. The experimental results showed that the IC delivers a P_ of over 34.5 dBm and a PAE of over 50% in GSM mode (900-MHz-band), and a 32 dBm P_, and a 42% PAE in DCS mode (1800-MHz-band).
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Power amplifier / 3.2-V operation / Dual-band / GSM / DCS / AlGaAs / GaAs HBT
Paper # ED99-288,MW99-212,ICD99-263
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Conference Date 2000/1/21(1days)
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Paper Information
Registration To Integrated Circuits and Devices (ICD)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) A 3.2-V Operation HBT-MMIC Power Amplifier for GSM/DCS Applications
Sub Title (in English)
Keyword(1) Power amplifier
Keyword(2) 3.2-V operation
Keyword(3) Dual-band
Keyword(4) GSM
Keyword(5) DCS
Keyword(6) AlGaAs
Keyword(7) GaAs HBT
1st Author's Name Kazuya YAMAMOTO
1st Author's Affiliation System LSI Development Center, Mitsubishi Electric Corporation()
2nd Author's Name Teruyuki SHIMURA
2nd Author's Affiliation Mitsubishi Electric Corporation
3rd Author's Name Tomoyuki ASADA
3rd Author's Affiliation Mitsubishi Electric Corporation
4th Author's Name Toshio OKUDA
4th Author's Affiliation Mitsubishi Electric Corporation
5th Author's Name Kazutomi MORI
5th Author's Affiliation Information Technology R&D Center, High Frequency & Optical Semiconductor Division, Mitsubishi Electric Corporation
6th Author's Name Kenichiro CHOUMEI
6th Author's Affiliation Mitsubishi Electric Corporation
7th Author's Name Satoshi SUZUKI
7th Author's Affiliation Mitsubishi Electric Corporation
8th Author's Name Takeshi MIURA
8th Author's Affiliation Mitsubishi Electric Corporation
9th Author's Name Shinichi FUJIMOTO
9th Author's Affiliation Mitsubishi Electric Corporation
10th Author's Name Ryo HATTORI
10th Author's Affiliation Mitsubishi Electric Corporation
11th Author's Name Hirofumi NAKANO
11th Author's Affiliation Mitsubishi Electric Corporation
12th Author's Name Kenji HOSOGI
12th Author's Affiliation Mitsubishi Electric Corporation
13th Author's Name Jun OTSUJI
13th Author's Affiliation Mitsubishi Electric Corporation
14th Author's Name Akira INOUE
14th Author's Affiliation Mitsubishi Electric Corporation
15th Author's Name Koutarou YAJIMA
15th Author's Affiliation Mitsubishi Electric Corporation
16th Author's Name Toshio OGATA
16th Author's Affiliation Mitsubishi Electric Corporation
17th Author's Name Yukio MIYAZAKI
17th Author's Affiliation Mitsubishi Electric Corporation
18th Author's Name Masahide YAMANOUCHI
18th Author's Affiliation Mitsubishi Electric Corporation
Date 2000/1/21
Paper # ED99-288,MW99-212,ICD99-263
Volume (vol) vol.99
Number (no) 561
Page pp.pp.-
#Pages 6
Date of Issue