Presentation 2000/1/21
A Buried p-Gate Heterojunction Field Effect Transistor for Digital Wireless Communication Systems
Mitsuhiro Nakamura, Shinichi Wada, Masayoshi Abe, Hidetoshi Kawasaki, Ichiro
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Abstract(in English) A buried p^+-AlGaAs gate AlGaAs / InGaAs / AlGaAs double heterojunction FET has been developed for power amplifiers of advanced wireless communication handsets. The buried p^+-AlGaAs gate was formed by Zn diffusion technique. A low on-resistance of 1.6Ωmm and a high gate built-in voltage of 1.5V with a maximum transcondutance of 420mS / mm were realized for a 0.8μm gate device. An output power of 22.1dBm, an ACPR of -48.8dBc / 30KHz and an efficiency of 50.4% were obtained under 1.9GHz narrow band CDMA signal excitation and positive gate bias operation.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Hetero FET / p-gate, / Power Amplifier
Paper # ED99-287,MW99-211,ICD99-262
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Conference Date 2000/1/21(1days)
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Registration To Integrated Circuits and Devices (ICD)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) A Buried p-Gate Heterojunction Field Effect Transistor for Digital Wireless Communication Systems
Sub Title (in English)
Keyword(1) Hetero FET
Keyword(2) p-gate,
Keyword(3) Power Amplifier
1st Author's Name Mitsuhiro Nakamura
1st Author's Affiliation Sony Corporation Core Technology & Network Company()
2nd Author's Name Shinichi Wada
2nd Author's Affiliation Sony Corporation Core Technology & Network Company
3rd Author's Name Masayoshi Abe
3rd Author's Affiliation Sony Corporation Core Technology & Network Company
4th Author's Name Hidetoshi Kawasaki
4th Author's Affiliation Sony Corporation Core Technology & Network Company
5th Author's Name Ichiro
5th Author's Affiliation Sony Corporation Core Technology & Network Company
Date 2000/1/21
Paper # ED99-287,MW99-211,ICD99-262
Volume (vol) vol.99
Number (no) 561
Page pp.pp.-
#Pages 6
Date of Issue