| Presentation | 2000/1/21 200W GaAs-Based MODFET Power Amplifier for W-CDMA Base Stations H. Ishida, T. Yokoyama, H. Furukawa, T. Tanaka, S. Morimoto, M. Maeda, Y. Ota, D. Ueda, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have developed a novel GaAs-based MODFET with high breakdown voltage keeping high maximum drain current where double-recessed and offset gate structures are provided. This newly developed MODFET attained the output power of 200 W with a power-added efficiency of 48.7% at a supplying voltage of 14 V and a quiescent drain current of 10 A, which is the highest output power exibited by using GaAs based FET's ever reported. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaAs / FET / High Power / Base Station / Breakdown Voltage / Frequency Dispersion |
| Paper # | ED99-282,MW99-206,ICD99-257 |
| Date of Issue |
| Conference Information | |
| Committee | ICD |
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| Conference Date | 2000/1/21(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Integrated Circuits and Devices (ICD) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | 200W GaAs-Based MODFET Power Amplifier for W-CDMA Base Stations |
| Sub Title (in English) | |
| Keyword(1) | GaAs |
| Keyword(2) | FET |
| Keyword(3) | High Power |
| Keyword(4) | Base Station |
| Keyword(5) | Breakdown Voltage |
| Keyword(6) | Frequency Dispersion |
| 1st Author's Name | H. Ishida |
| 1st Author's Affiliation | Semiconductor Device Research Center Matsushita Electronics Corporation() |
| 2nd Author's Name | T. Yokoyama |
| 2nd Author's Affiliation | Semiconductor Device Research Center Matsushita Electronics Corporation |
| 3rd Author's Name | H. Furukawa |
| 3rd Author's Affiliation | Semiconductor Device Research Center Matsushita Electronics Corporation |
| 4th Author's Name | T. Tanaka |
| 4th Author's Affiliation | Semiconductor Device Research Center Matsushita Electronics Corporation |
| 5th Author's Name | S. Morimoto |
| 5th Author's Affiliation | Semiconductor Device Research Center Matsushita Electronics Corporation |
| 6th Author's Name | M. Maeda |
| 6th Author's Affiliation | Semiconductor Device Research Center Matsushita Electronics Corporation |
| 7th Author's Name | Y. Ota |
| 7th Author's Affiliation | Semiconductor Device Research Center Matsushita Electronics Corporation |
| 8th Author's Name | D. Ueda |
| 8th Author's Affiliation | Semiconductor Device Research Center Matsushita Electronics Corporation |
| Date | 2000/1/21 |
| Paper # | ED99-282,MW99-206,ICD99-257 |
| Volume (vol) | vol.99 |
| Number (no) | 561 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |