Presentation | 2000/1/21 L-band Power Perfoemance of AlGaN/GaN HJFETs K. Kunihiro, N. Hayama, K. Kasahara, Y. Takahashi, T. Nakayama, Y. Ohno, K. Matsunaga, H. Miyamoto, Y. Ando, M. Kuzuhara, |
---|---|
PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | We report on the L-band (1.95 GHz) power performance of AlGaN / GaN HJFETs fabricated on sapphire substrates. Self-heating and current-lag are serious problems to improve the power performance in AlGaN / GaN HJFETs. To minimize the thermal variation between source fingers, the source electrodes were connected by air bridge interconnections;this improved power performance. In addition, correlation between current-lag and output power was investigated in detail. Finally, the power density was significantly increased by using SiC substrate which has higher thermal conductivity than sapphire substrate. An AlGaN / GaN HJFET on SiC substrate delivered a power density of 2.3 W / mm at V_d=22V. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Nitride semiconductors / Power FET / Microwave / Self-heating / Current-lag / Sic substrate |
Paper # | ED99-281,MW99-205,ICD99-256 |
Date of Issue |
Conference Information | |
Committee | ICD |
---|---|
Conference Date | 2000/1/21(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | |
Chair | |
Vice Chair | |
Secretary | |
Assistant |
Paper Information | |
Registration To | Integrated Circuits and Devices (ICD) |
---|---|
Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | L-band Power Perfoemance of AlGaN/GaN HJFETs |
Sub Title (in English) | |
Keyword(1) | Nitride semiconductors |
Keyword(2) | Power FET |
Keyword(3) | Microwave |
Keyword(4) | Self-heating |
Keyword(5) | Current-lag |
Keyword(6) | Sic substrate |
1st Author's Name | K. Kunihiro |
1st Author's Affiliation | Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation() |
2nd Author's Name | N. Hayama |
2nd Author's Affiliation | Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation |
3rd Author's Name | K. Kasahara |
3rd Author's Affiliation | Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation |
4th Author's Name | Y. Takahashi |
4th Author's Affiliation | Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation |
5th Author's Name | T. Nakayama |
5th Author's Affiliation | Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation |
6th Author's Name | Y. Ohno |
6th Author's Affiliation | Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation |
7th Author's Name | K. Matsunaga |
7th Author's Affiliation | Kansai Electronics Research Laboratories, NEC Corporation |
8th Author's Name | H. Miyamoto |
8th Author's Affiliation | Kansai Electronics Research Laboratories, NEC Corporation |
9th Author's Name | Y. Ando |
9th Author's Affiliation | Kansai Electronics Research Laboratories, NEC Corporation |
10th Author's Name | M. Kuzuhara |
10th Author's Affiliation | Kansai Electronics Research Laboratories, NEC Corporation |
Date | 2000/1/21 |
Paper # | ED99-281,MW99-205,ICD99-256 |
Volume (vol) | vol.99 |
Number (no) | 561 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |