Presentation 2000/1/21
L-band Power Perfoemance of AlGaN/GaN HJFETs
K. Kunihiro, N. Hayama, K. Kasahara, Y. Takahashi, T. Nakayama, Y. Ohno, K. Matsunaga, H. Miyamoto, Y. Ando, M. Kuzuhara,
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Abstract(in English) We report on the L-band (1.95 GHz) power performance of AlGaN / GaN HJFETs fabricated on sapphire substrates. Self-heating and current-lag are serious problems to improve the power performance in AlGaN / GaN HJFETs. To minimize the thermal variation between source fingers, the source electrodes were connected by air bridge interconnections;this improved power performance. In addition, correlation between current-lag and output power was investigated in detail. Finally, the power density was significantly increased by using SiC substrate which has higher thermal conductivity than sapphire substrate. An AlGaN / GaN HJFET on SiC substrate delivered a power density of 2.3 W / mm at V_d=22V.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Nitride semiconductors / Power FET / Microwave / Self-heating / Current-lag / Sic substrate
Paper # ED99-281,MW99-205,ICD99-256
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Conference Date 2000/1/21(1days)
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Registration To Integrated Circuits and Devices (ICD)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) L-band Power Perfoemance of AlGaN/GaN HJFETs
Sub Title (in English)
Keyword(1) Nitride semiconductors
Keyword(2) Power FET
Keyword(3) Microwave
Keyword(4) Self-heating
Keyword(5) Current-lag
Keyword(6) Sic substrate
1st Author's Name K. Kunihiro
1st Author's Affiliation Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation()
2nd Author's Name N. Hayama
2nd Author's Affiliation Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation
3rd Author's Name K. Kasahara
3rd Author's Affiliation Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation
4th Author's Name Y. Takahashi
4th Author's Affiliation Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation
5th Author's Name T. Nakayama
5th Author's Affiliation Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation
6th Author's Name Y. Ohno
6th Author's Affiliation Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation
7th Author's Name K. Matsunaga
7th Author's Affiliation Kansai Electronics Research Laboratories, NEC Corporation
8th Author's Name H. Miyamoto
8th Author's Affiliation Kansai Electronics Research Laboratories, NEC Corporation
9th Author's Name Y. Ando
9th Author's Affiliation Kansai Electronics Research Laboratories, NEC Corporation
10th Author's Name M. Kuzuhara
10th Author's Affiliation Kansai Electronics Research Laboratories, NEC Corporation
Date 2000/1/21
Paper # ED99-281,MW99-205,ICD99-256
Volume (vol) vol.99
Number (no) 561
Page pp.pp.-
#Pages 6
Date of Issue