| Presentation | 2000/1/21 An AlGaAs Hetero MESFET with a Graded Pulse Doped Channel K. Nakata, R. Sakamoto, T. Hashinaga, N. Kuwata, K. Otobe, S. Nakajima, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | High output power and high efficiency of FET is important for the base station of digital wireless communication systems. Then we have developed an AlGaAs hetero MESFET with a graded pulse doped channel. A graded pulse-doped channel that means active layer in which doping concentration increase exponentially toward buffer layer, improves output power at low quiescent drain current (Iq). At the condition of Iq=4%Idss, P1dB is increased by 9dB than our conventional MESFET. Breakdown voltage and gate leakage current are improved by insertion of AlGaAs-cap layer. The AlGaAs hetero MESFET shows high output power (540mW / mm) and high efficiency (η_ |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | AlGaAs / MESFET / Digital wireless communication / Low distortion / 1dB compression point |
| Paper # | ED99-280,MW99-204,ICD99-255 |
| Date of Issue |
| Conference Information | |
| Committee | ICD |
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| Conference Date | 2000/1/21(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Integrated Circuits and Devices (ICD) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | An AlGaAs Hetero MESFET with a Graded Pulse Doped Channel |
| Sub Title (in English) | |
| Keyword(1) | AlGaAs |
| Keyword(2) | MESFET |
| Keyword(3) | Digital wireless communication |
| Keyword(4) | Low distortion |
| Keyword(5) | 1dB compression point |
| 1st Author's Name | K. Nakata |
| 1st Author's Affiliation | Optoelectronics R&D Labs., Sumitomo Electric Industry, LTD() |
| 2nd Author's Name | R. Sakamoto |
| 2nd Author's Affiliation | Optoelectronics R&D Labs., Sumitomo Electric Industry, LTD |
| 3rd Author's Name | T. Hashinaga |
| 3rd Author's Affiliation | Optoelectronics R&D Labs., Sumitomo Electric Industry, LTD |
| 4th Author's Name | N. Kuwata |
| 4th Author's Affiliation | Optoelectronics R&D Labs., Sumitomo Electric Industry, LTD |
| 5th Author's Name | K. Otobe |
| 5th Author's Affiliation | Optoelectronics R&D Labs., Sumitomo Electric Industry, LTD |
| 6th Author's Name | S. Nakajima |
| 6th Author's Affiliation | Optoelectronics R&D Labs., Sumitomo Electric Industry, LTD |
| Date | 2000/1/21 |
| Paper # | ED99-280,MW99-204,ICD99-255 |
| Volume (vol) | vol.99 |
| Number (no) | 561 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |