Presentation | 2000/1/19 Analysis of Gate-Lag Phenomena in Recessed-Gate and Buried-Gate GaAs MESFETs A. Wakabayashi, Y. Mitani, K. Horio, |
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Abstract(in Japanese) | (See Japanese page) | ||
Abstract(in English) | We have made two-dimensional simulation of turn-on characteristics in recessed-gate and buried-gate GaAs MESFETs, and studied how the gate-lag (which may occur mainly due to surface states) is affected by the structural parameters and the off-state gate voltage V_, the gate-lag could be greatly reduced by introducing the buried-gate structure. However, it is suggested that the large gate-lag might be seen when V_ | . | |
Keyword(in Japanese) | (See Japanese page) | ||
Keyword(in English) | GaAs MESFET / gate lag / recessed-gate structure / buried-gate structure / surface state / device simulation | ||
Paper # | ED99-260,MW99-184,ICD99-235 | ||
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Committee | ICD |
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Conference Date | 2000/1/19(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Integrated Circuits and Devices (ICD) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Analysis of Gate-Lag Phenomena in Recessed-Gate and Buried-Gate GaAs MESFETs |
Sub Title (in English) | |
Keyword(1) | GaAs MESFET |
Keyword(2) | gate lag |
Keyword(3) | recessed-gate structure |
Keyword(4) | buried-gate structure |
Keyword(5) | surface state |
Keyword(6) | device simulation |
1st Author's Name | A. Wakabayashi |
1st Author's Affiliation | Faculty of Systems Engineering, Shibaura Institute of Technology() |
2nd Author's Name | Y. Mitani |
2nd Author's Affiliation | Faculty of Systems Engineering, Shibaura Institute of Technology |
3rd Author's Name | K. Horio |
3rd Author's Affiliation | Faculty of Systems Engineering, Shibaura Institute of Technology |
Date | 2000/1/19 |
Paper # | ED99-260,MW99-184,ICD99-235 |
Volume (vol) | vol.99 |
Number (no) | 559 |
Page | pp.pp.- |
#Pages | 7 |
Date of Issue |