Presentation 2000/1/19
Analysis of Gate-Lag Phenomena in Recessed-Gate and Buried-Gate GaAs MESFETs
A. Wakabayashi, Y. Mitani, K. Horio,
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Abstract(in English) We have made two-dimensional simulation of turn-on characteristics in recessed-gate and buried-gate GaAs MESFETs, and studied how the gate-lag (which may occur mainly due to surface states) is affected by the structural parameters and the off-state gate voltage V_. It is shown that when V_ is around the threshold voltage (pinch-off voltage) V_, the gate-lag could be greatly reduced by introducing the buried-gate structure. However, it is suggested that the large gate-lag might be seen when V_ is much more negative than V_.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) GaAs MESFET / gate lag / recessed-gate structure / buried-gate structure / surface state / device simulation
Paper # ED99-260,MW99-184,ICD99-235
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Conference Date 2000/1/19(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Analysis of Gate-Lag Phenomena in Recessed-Gate and Buried-Gate GaAs MESFETs
Sub Title (in English)
Keyword(1) GaAs MESFET
Keyword(2) gate lag
Keyword(3) recessed-gate structure
Keyword(4) buried-gate structure
Keyword(5) surface state
Keyword(6) device simulation
1st Author's Name A. Wakabayashi
1st Author's Affiliation Faculty of Systems Engineering, Shibaura Institute of Technology()
2nd Author's Name Y. Mitani
2nd Author's Affiliation Faculty of Systems Engineering, Shibaura Institute of Technology
3rd Author's Name K. Horio
3rd Author's Affiliation Faculty of Systems Engineering, Shibaura Institute of Technology
Date 2000/1/19
Paper # ED99-260,MW99-184,ICD99-235
Volume (vol) vol.99
Number (no) 559
Page pp.pp.-
#Pages 7
Date of Issue