Presentation 1999/8/26
Simulation for degradation of flash memory due to hole-induced charge traps in the tunnel oxide
Ayumi Yokozawa, Takuya Kitamura, Masato Kawata,
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Abstract(in English) Degradation of the retention characteristics induced by hole injection during the white/erase (W/E) operation has been investigated. When gigy source voltage is appolied in the W/E operation, large number of hot holes are generated due to band-to-band tunneling (BTBT), and some of them are injected into the tunnel oxides. Hole injection has been reported to increase stress induced leakage currents (SILC), and the increase in the SILC will accelerate the degradation of retention characteristics. In this wolk, we have estimated the degradation of the retention characteristics from the defference in oxide charge traps that are induced by hole injection. Employing a hole-induced trap generation model, the dependence of the retention characteristics on the source voltage and the oxide electric field at the W/E operation has been successfully explained.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Flash memories / Retention characteristics / Hole injection / Tunnel oxides / Electron traps
Paper # ICD99-133
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Committee ICD
Conference Date 1999/8/26(1days)
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Registration To Integrated Circuits and Devices (ICD)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Simulation for degradation of flash memory due to hole-induced charge traps in the tunnel oxide
Sub Title (in English)
Keyword(1) Flash memories
Keyword(2) Retention characteristics
Keyword(3) Hole injection
Keyword(4) Tunnel oxides
Keyword(5) Electron traps
1st Author's Name Ayumi Yokozawa
1st Author's Affiliation NEC ULSI Device Development Laboratory()
2nd Author's Name Takuya Kitamura
2nd Author's Affiliation NEC ULSI Device Development Laboratory
3rd Author's Name Masato Kawata
3rd Author's Affiliation NEC ULSI Device Development Laboratory
Date 1999/8/26
Paper # ICD99-133
Volume (vol) vol.99
Number (no) 265
Page pp.pp.-
#Pages 8
Date of Issue