| Presentation | 1999/8/26 Simulation for degradation of flash memory due to hole-induced charge traps in the tunnel oxide Ayumi Yokozawa, Takuya Kitamura, Masato Kawata, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Degradation of the retention characteristics induced by hole injection during the white/erase (W/E) operation has been investigated. When gigy source voltage is appolied in the W/E operation, large number of hot holes are generated due to band-to-band tunneling (BTBT), and some of them are injected into the tunnel oxides. Hole injection has been reported to increase stress induced leakage currents (SILC), and the increase in the SILC will accelerate the degradation of retention characteristics. In this wolk, we have estimated the degradation of the retention characteristics from the defference in oxide charge traps that are induced by hole injection. Employing a hole-induced trap generation model, the dependence of the retention characteristics on the source voltage and the oxide electric field at the W/E operation has been successfully explained. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Flash memories / Retention characteristics / Hole injection / Tunnel oxides / Electron traps |
| Paper # | ICD99-133 |
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| Conference Information | |
| Committee | ICD |
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| Conference Date | 1999/8/26(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Integrated Circuits and Devices (ICD) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Simulation for degradation of flash memory due to hole-induced charge traps in the tunnel oxide |
| Sub Title (in English) | |
| Keyword(1) | Flash memories |
| Keyword(2) | Retention characteristics |
| Keyword(3) | Hole injection |
| Keyword(4) | Tunnel oxides |
| Keyword(5) | Electron traps |
| 1st Author's Name | Ayumi Yokozawa |
| 1st Author's Affiliation | NEC ULSI Device Development Laboratory() |
| 2nd Author's Name | Takuya Kitamura |
| 2nd Author's Affiliation | NEC ULSI Device Development Laboratory |
| 3rd Author's Name | Masato Kawata |
| 3rd Author's Affiliation | NEC ULSI Device Development Laboratory |
| Date | 1999/8/26 |
| Paper # | ICD99-133 |
| Volume (vol) | vol.99 |
| Number (no) | 265 |
| Page | pp.pp.- |
| #Pages | 8 |
| Date of Issue | |