| Presentation | 1999/8/26 Calibration method for HDP-CVD simulation S. Kinoshita, H. Kawaguchi, N. Shigyo, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | This article proposes a calibration method for a topography simulation, especially for an inter-metal dielectric(IMD) step using HDP-CVD. Terrain of Abant! was used. For HDP-CVD, four phenomena such as thermal deposition, ion enhanced deposition,sputter etching by Ar+, Re-deposition were considered using seven model parameters. A proposed calibration method was based on experimental SEM data, plasma simulation and published papers. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | TCAD / HDP-CVD / IMD / Topography simulation |
| Paper # | ICD99-131 |
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| Conference Information | |
| Committee | ICD |
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| Conference Date | 1999/8/26(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Integrated Circuits and Devices (ICD) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Calibration method for HDP-CVD simulation |
| Sub Title (in English) | |
| Keyword(1) | TCAD |
| Keyword(2) | HDP-CVD |
| Keyword(3) | IMD |
| Keyword(4) | Topography simulation |
| 1st Author's Name | S. Kinoshita |
| 1st Author's Affiliation | Microprocessor & Custom LSI Division, Toshiba Corporation, Semiconductor Company() |
| 2nd Author's Name | H. Kawaguchi |
| 2nd Author's Affiliation | Microprocessor & Custom LSI Division, Toshiba Corporation, Semiconductor Company |
| 3rd Author's Name | N. Shigyo |
| 3rd Author's Affiliation | Microprocessor & Custom LSI Division, Toshiba Corporation, Semiconductor Company |
| Date | 1999/8/26 |
| Paper # | ICD99-131 |
| Volume (vol) | vol.99 |
| Number (no) | 265 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |