Presentation 1999/8/26
Anomalous Current Analysis in Memory Cells of Dynamic Random Access Memories (DRAM's) by Device Simulation
Ken Yamaguchi, Tatsuya Teshima, Hiroshi Mizuta,
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Abstract(in English) A new model is presented for explaining an anomalous leakage current observed in the tail distribution of the cumulative probability of the data retention time of dynamic random access memories(DRAM's). The proposed model can clearly demonstrate the anomalous behavior in current-voltage (I-V) characteristics; namely, a steep increase and saturation in IV curves, and also demonstrate a fluctuation of the critical voltage above which the current steeply increases. Further, quantitative evaluations are given from the viewpoint of material constants for clarifying origins of the leakage current.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) DRAM / data retention time / cumulative probability / leakage current
Paper # ICD99-130
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Conference Date 1999/8/26(1days)
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Registration To Integrated Circuits and Devices (ICD)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Anomalous Current Analysis in Memory Cells of Dynamic Random Access Memories (DRAM's) by Device Simulation
Sub Title (in English)
Keyword(1) DRAM
Keyword(2) data retention time
Keyword(3) cumulative probability
Keyword(4) leakage current
1st Author's Name Ken Yamaguchi
1st Author's Affiliation Advanced Research Laboratory, Hitachi, Lid.()
2nd Author's Name Tatsuya Teshima
2nd Author's Affiliation Advanced Research Laboratory, Hitachi, Lid.
3rd Author's Name Hiroshi Mizuta
3rd Author's Affiliation Hitachi Canbridge Laboratory
Date 1999/8/26
Paper # ICD99-130
Volume (vol) vol.99
Number (no) 265
Page pp.pp.-
#Pages 8
Date of Issue