Presentation | 1999/8/26 Quantum Device Simulation of Ujtrasmalj MOSFET Hideaki Tsuchiya, Tanroku Miyoshi, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | With downsizing of ULSI devices, it is indispensable to take quantum mechanical effects into account in device modeling. Recently, we have formulated a novel Boltzmann-type quantum transport equation based upon the Wigner distribution function. In this model, the quantum effects are represented in terms of quantum mechanically corrected potential in the classical Boltzmann equation. In this paper, we apply the quantum transport equation to static analysis of ultrasmall MOSFET's, and further investigate the influence of the quantum effects such as tunneling and quantum confinement effects. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | MOSFET / quantum effects / Wigner distribution function / quantum corrections of potential / quantum moment equation / density-gradient theory |
Paper # | ICD99-127 |
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Committee | ICD |
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Conference Date | 1999/8/26(1days) |
Place (in Japanese) | (See Japanese page) |
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Registration To | Integrated Circuits and Devices (ICD) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Quantum Device Simulation of Ujtrasmalj MOSFET |
Sub Title (in English) | |
Keyword(1) | MOSFET |
Keyword(2) | quantum effects |
Keyword(3) | Wigner distribution function |
Keyword(4) | quantum corrections of potential |
Keyword(5) | quantum moment equation |
Keyword(6) | density-gradient theory |
1st Author's Name | Hideaki Tsuchiya |
1st Author's Affiliation | Department of Electrical and Electronics Engineering, Kobe University() |
2nd Author's Name | Tanroku Miyoshi |
2nd Author's Affiliation | Department of Electrical and Electronics Engineering, Kobe University |
Date | 1999/8/26 |
Paper # | ICD99-127 |
Volume (vol) | vol.99 |
Number (no) | 265 |
Page | pp.pp.- |
#Pages | 8 |
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