Presentation 1999/8/26
Quantum Device Simulation of Ujtrasmalj MOSFET
Hideaki Tsuchiya, Tanroku Miyoshi,
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Abstract(in English) With downsizing of ULSI devices, it is indispensable to take quantum mechanical effects into account in device modeling. Recently, we have formulated a novel Boltzmann-type quantum transport equation based upon the Wigner distribution function. In this model, the quantum effects are represented in terms of quantum mechanically corrected potential in the classical Boltzmann equation. In this paper, we apply the quantum transport equation to static analysis of ultrasmall MOSFET's, and further investigate the influence of the quantum effects such as tunneling and quantum confinement effects.
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Keyword(in English) MOSFET / quantum effects / Wigner distribution function / quantum corrections of potential / quantum moment equation / density-gradient theory
Paper # ICD99-127
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Conference Date 1999/8/26(1days)
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Registration To Integrated Circuits and Devices (ICD)
Language JPN
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Title (in English) Quantum Device Simulation of Ujtrasmalj MOSFET
Sub Title (in English)
Keyword(1) MOSFET
Keyword(2) quantum effects
Keyword(3) Wigner distribution function
Keyword(4) quantum corrections of potential
Keyword(5) quantum moment equation
Keyword(6) density-gradient theory
1st Author's Name Hideaki Tsuchiya
1st Author's Affiliation Department of Electrical and Electronics Engineering, Kobe University()
2nd Author's Name Tanroku Miyoshi
2nd Author's Affiliation Department of Electrical and Electronics Engineering, Kobe University
Date 1999/8/26
Paper # ICD99-127
Volume (vol) vol.99
Number (no) 265
Page pp.pp.-
#Pages 8
Date of Issue