| Presentation | 1999/7/23 Dependence of Switching Characteristics on Fabrication Process and Capacitor Size for Pt/SBT/Pt Ferroelectric Capacitor Woo Seok Yang, Seung Jin Yeom, Nam Kyeng Kim, Yong Sik Yu, Shang Kyoo Lee, Chung Tae Kim, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Effects of fabrication process and capacitor size on the switching characteristics were investigated for Pt/SrBi_2Ta_2O_9 (SBT)/Pt capacitors. The switchable polarization (P^*-P^∧) and its saturation characteristic with operation voltage were degraded by the damage during capacitor etching, intermediate level dielectric (ILD) formation, and contact-hole etching. They were also degraded with decreasing capacitor size, because of the greater damage for the smaller capacitor. By optimization of fabrication process such as use of capacitor level dielectric (CLD) under ILD and proper recovery annealing, the damage could be sufficiently minimized, then the switchable polarization and its saturation characteristic were independent on capacitor size in the range from 100×100 to 1.4×1.4 μm^2. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Nonvolatile memory / Ferroelectric capacitor / SrBi_2Ta_2O_9 (SBT) / capacitor size / switchable polarization / saturation |
| Paper # | ICD99-124 |
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| Conference Information | |
| Committee | ICD |
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| Conference Date | 1999/7/23(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Integrated Circuits and Devices (ICD) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Dependence of Switching Characteristics on Fabrication Process and Capacitor Size for Pt/SBT/Pt Ferroelectric Capacitor |
| Sub Title (in English) | |
| Keyword(1) | Nonvolatile memory |
| Keyword(2) | Ferroelectric capacitor |
| Keyword(3) | SrBi_2Ta_2O_9 (SBT) |
| Keyword(4) | capacitor size |
| Keyword(5) | switchable polarization |
| Keyword(6) | saturation |
| 1st Author's Name | Woo Seok Yang |
| 1st Author's Affiliation | Memory Research and Development Division, Hyundai Electronics Industries Co., Ltd.() |
| 2nd Author's Name | Seung Jin Yeom |
| 2nd Author's Affiliation | Memory Research and Development Division, Hyundai Electronics Industries Co., Ltd. |
| 3rd Author's Name | Nam Kyeng Kim |
| 3rd Author's Affiliation | Memory Research and Development Division, Hyundai Electronics Industries Co., Ltd. |
| 4th Author's Name | Yong Sik Yu |
| 4th Author's Affiliation | Memory Research and Development Division, Hyundai Electronics Industries Co., Ltd. |
| 5th Author's Name | Shang Kyoo Lee |
| 5th Author's Affiliation | Memory Research and Development Division, Hyundai Electronics Industries Co., Ltd. |
| 6th Author's Name | Chung Tae Kim |
| 6th Author's Affiliation | Memory Research and Development Division, Hyundai Electronics Industries Co., Ltd. |
| Date | 1999/7/23 |
| Paper # | ICD99-124 |
| Volume (vol) | vol.99 |
| Number (no) | 234 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |