| Presentation | 1999/7/23 Hydrogen-Induced Degradation of Oxygen Plasma Treated Ferroelectric Pb (Zr,Ti)O_3 Capacitor Youngsoo Par, June Key Lee, Ilsub Chung, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Electron cyclotron resonance (ECR) oxygen plasma treatment of the Pt/Pb (Zr_xTi_<1-x>)O_3/Pt capacitor was attempted to reduce the property degradation due to hydrogen. It was found that oxygen plasma treatment using ECR modifies the surface of Pt electrodes. Surface modification deteriorates catalytic activity of Pt electrodes, thereby significantly improving ferroelectric properties such as remnant polarization and leakage current. It seems that highly reactive oxygen radicals in ECR plasma play an important role in deteriorating the catalytic activity of Pt electrodes. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | PZT / Pt / ECR oxygen plasma / H_2 annealing |
| Paper # | ICD99-123 |
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| Conference Information | |
| Committee | ICD |
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| Conference Date | 1999/7/23(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Paper Information | |
| Registration To | Integrated Circuits and Devices (ICD) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Hydrogen-Induced Degradation of Oxygen Plasma Treated Ferroelectric Pb (Zr,Ti)O_3 Capacitor |
| Sub Title (in English) | |
| Keyword(1) | PZT |
| Keyword(2) | Pt |
| Keyword(3) | ECR oxygen plasma |
| Keyword(4) | H_2 annealing |
| 1st Author's Name | Youngsoo Par |
| 1st Author's Affiliation | Microelectronics Laboratory, Samsung Advanced Institute of Technology() |
| 2nd Author's Name | June Key Lee |
| 2nd Author's Affiliation | Microelectronics Laboratory, Samsung Advanced Institute of Technology |
| 3rd Author's Name | Ilsub Chung |
| 3rd Author's Affiliation | Microelectronics Laboratory, Samsung Advanced Institute of Technology |
| Date | 1999/7/23 |
| Paper # | ICD99-123 |
| Volume (vol) | vol.99 |
| Number (no) | 234 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |