Presentation 1999/7/23
A Non-destructive Readout Single Transistor FRAM with Floating Well structures
Shi-Ho Kim, Won Jae Lee, In-kyu You, Byoung Gon Yu,
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Abstract(in English) A nonvolatile single transistor type FRAM is proposed. To overcome the disturb problem of one-transistor-type FRAM during write operation, each well is isolated from adjacent columns, hence, the well bias can be controlled individually and can be floating state. The results of HSPICE simulations showed the successful operations of the proposed cell array. The worst gate disturb voltage of unselected cell is less than 2 volt, which satisfies V/2 rule.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Ferroelectric Nonvolatile memory / Non-destructive readout / single transistor FRAM
Paper # ICD99-120
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Conference Date 1999/7/23(1days)
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Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) A Non-destructive Readout Single Transistor FRAM with Floating Well structures
Sub Title (in English)
Keyword(1) Ferroelectric Nonvolatile memory
Keyword(2) Non-destructive readout
Keyword(3) single transistor FRAM
1st Author's Name Shi-Ho Kim
1st Author's Affiliation Dept. of Semiconductor Science, Wonkwang University()
2nd Author's Name Won Jae Lee
2nd Author's Affiliation Micro-Electronics Technology Lab., ETRI
3rd Author's Name In-kyu You
3rd Author's Affiliation Micro-Electronics Technology Lab., ETRI
4th Author's Name Byoung Gon Yu
4th Author's Affiliation Micro-Electronics Technology Lab., ETRI
Date 1999/7/23
Paper # ICD99-120
Volume (vol) vol.99
Number (no) 234
Page pp.pp.-
#Pages 4
Date of Issue