Presentation | 1999/7/23 A Non-destructive Readout Single Transistor FRAM with Floating Well structures Shi-Ho Kim, Won Jae Lee, In-kyu You, Byoung Gon Yu, |
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PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | A nonvolatile single transistor type FRAM is proposed. To overcome the disturb problem of one-transistor-type FRAM during write operation, each well is isolated from adjacent columns, hence, the well bias can be controlled individually and can be floating state. The results of HSPICE simulations showed the successful operations of the proposed cell array. The worst gate disturb voltage of unselected cell is less than 2 volt, which satisfies V/2 rule. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Ferroelectric Nonvolatile memory / Non-destructive readout / single transistor FRAM |
Paper # | ICD99-120 |
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Committee | ICD |
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Conference Date | 1999/7/23(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Integrated Circuits and Devices (ICD) |
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Language | ENG |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | A Non-destructive Readout Single Transistor FRAM with Floating Well structures |
Sub Title (in English) | |
Keyword(1) | Ferroelectric Nonvolatile memory |
Keyword(2) | Non-destructive readout |
Keyword(3) | single transistor FRAM |
1st Author's Name | Shi-Ho Kim |
1st Author's Affiliation | Dept. of Semiconductor Science, Wonkwang University() |
2nd Author's Name | Won Jae Lee |
2nd Author's Affiliation | Micro-Electronics Technology Lab., ETRI |
3rd Author's Name | In-kyu You |
3rd Author's Affiliation | Micro-Electronics Technology Lab., ETRI |
4th Author's Name | Byoung Gon Yu |
4th Author's Affiliation | Micro-Electronics Technology Lab., ETRI |
Date | 1999/7/23 |
Paper # | ICD99-120 |
Volume (vol) | vol.99 |
Number (no) | 234 |
Page | pp.pp.- |
#Pages | 4 |
Date of Issue |