| Presentation | 1999/7/23 Properties of MFSFET's with Various Gate Electrodes Using LiNbO_3/Si (100) Structures Kwang-Ho Kim, Soon-Won Jung, Chae-Gyu Kim, Byoung-Gon Yu, Won-Jae Lee, |
|---|---|
| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | MFSFET's with various gate electrodes, that are aluminum, platinum and poly-Si, using LiNbO_3/Si (100) structures were fabricated and the properties of the FET's have been discussed. The gate leakage current density of the MFS device using a Pt electrode showed the least value of low 10^<-8> A/cm^2 orders at the field of 500 kV/ cm. The drain current as a function of retention time of the FET using Pt electrode remained almost the same value of its initial value over 2 days at room temperature. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Gate electrode dependence / Ferroelectric film / LiNbO_3/Si (100) structure / MFSFET / Non-volatile memory |
| Paper # | ICD99-119 |
| Date of Issue |
| Conference Information | |
| Committee | ICD |
|---|---|
| Conference Date | 1999/7/23(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Integrated Circuits and Devices (ICD) |
|---|---|
| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Properties of MFSFET's with Various Gate Electrodes Using LiNbO_3/Si (100) Structures |
| Sub Title (in English) | |
| Keyword(1) | Gate electrode dependence |
| Keyword(2) | Ferroelectric film |
| Keyword(3) | LiNbO_3/Si (100) structure |
| Keyword(4) | MFSFET |
| Keyword(5) | Non-volatile memory |
| 1st Author's Name | Kwang-Ho Kim |
| 1st Author's Affiliation | Department of Semiconductor Engineering, Cheongju University() |
| 2nd Author's Name | Soon-Won Jung |
| 2nd Author's Affiliation | Department of Semiconductor Engineering, Cheongju University |
| 3rd Author's Name | Chae-Gyu Kim |
| 3rd Author's Affiliation | Department of Semiconductor Engineering, Cheongju University |
| 4th Author's Name | Byoung-Gon Yu |
| 4th Author's Affiliation | Electronics and Telecommunications Research Institute |
| 5th Author's Name | Won-Jae Lee |
| 5th Author's Affiliation | Electronics and Telecommunications Research Institute |
| Date | 1999/7/23 |
| Paper # | ICD99-119 |
| Volume (vol) | vol.99 |
| Number (no) | 234 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |