Presentation | 1999/7/23 Challenge to 0.13μm Device Patterning using KrF In-Sung Kim, Jung-Hyeon Lee, Joon-Soo Par, Dong-Ho Cha, Han-Ku Cho, Joo-Tae Moon, Sang-In Lee, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | The extension of optical lithography to sub-0.15μm design rule(D/R) using high NA KrF scanner and resolution enhancement technique(RET) is being considered because of the delayed ArF lithography technology, so that the development of 0.13μm device which has been accepted as the role of ArF or any post-KrF technologies will be a real challenge to most lithographers and even to the engineers of related technologies such as etch, thin film, CMP, etc.. In this paper, we discuss and predict the status and feasibility of 0.13μm device lithography with KrF refering to the theory and simulation, and then show some critical device patterns exposed with several KrF scanners which are currently available. Results of high NA scanners such as 0.68NA and 0.70NA available in the near future are also included and discussed. In the latter part of this paper, the most critical issues that can be predicted for 0.13μm device lithography are mentioned as requirements. We conclude that the challenge could be surmountable in the near future. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | KrF / lithography / high NA / RET / ArF |
Paper # | ICD99-114 |
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Conference Information | |
Committee | ICD |
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Conference Date | 1999/7/23(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Integrated Circuits and Devices (ICD) |
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Language | ENG |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Challenge to 0.13μm Device Patterning using KrF |
Sub Title (in English) | |
Keyword(1) | KrF |
Keyword(2) | lithography |
Keyword(3) | high NA |
Keyword(4) | RET |
Keyword(5) | ArF |
1st Author's Name | In-Sung Kim |
1st Author's Affiliation | Semiconductor R&D Center, Samsung Electronics Co. Ltd.() |
2nd Author's Name | Jung-Hyeon Lee |
2nd Author's Affiliation | Semiconductor R&D Center, Samsung Electronics Co. Ltd. |
3rd Author's Name | Joon-Soo Par |
3rd Author's Affiliation | Semiconductor R&D Center, Samsung Electronics Co. Ltd. |
4th Author's Name | Dong-Ho Cha |
4th Author's Affiliation | Semiconductor R&D Center, Samsung Electronics Co. Ltd. |
5th Author's Name | Han-Ku Cho |
5th Author's Affiliation | Semiconductor R&D Center, Samsung Electronics Co. Ltd. |
6th Author's Name | Joo-Tae Moon |
6th Author's Affiliation | Semiconductor R&D Center, Samsung Electronics Co. Ltd. |
7th Author's Name | Sang-In Lee |
7th Author's Affiliation | Semiconductor R&D Center, Samsung Electronics Co. Ltd. |
Date | 1999/7/23 |
Paper # | ICD99-114 |
Volume (vol) | vol.99 |
Number (no) | 234 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |