Presentation 1999/7/23
Challenge to 0.13μm Device Patterning using KrF
In-Sung Kim, Jung-Hyeon Lee, Joon-Soo Par, Dong-Ho Cha, Han-Ku Cho, Joo-Tae Moon, Sang-In Lee,
PDF Download Page PDF download Page Link
Abstract(in Japanese) (See Japanese page)
Abstract(in English) The extension of optical lithography to sub-0.15μm design rule(D/R) using high NA KrF scanner and resolution enhancement technique(RET) is being considered because of the delayed ArF lithography technology, so that the development of 0.13μm device which has been accepted as the role of ArF or any post-KrF technologies will be a real challenge to most lithographers and even to the engineers of related technologies such as etch, thin film, CMP, etc.. In this paper, we discuss and predict the status and feasibility of 0.13μm device lithography with KrF refering to the theory and simulation, and then show some critical device patterns exposed with several KrF scanners which are currently available. Results of high NA scanners such as 0.68NA and 0.70NA available in the near future are also included and discussed. In the latter part of this paper, the most critical issues that can be predicted for 0.13μm device lithography are mentioned as requirements. We conclude that the challenge could be surmountable in the near future.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) KrF / lithography / high NA / RET / ArF
Paper # ICD99-114
Date of Issue

Conference Information
Committee ICD
Conference Date 1999/7/23(1days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair
Vice Chair
Secretary
Assistant

Paper Information
Registration To Integrated Circuits and Devices (ICD)
Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Challenge to 0.13μm Device Patterning using KrF
Sub Title (in English)
Keyword(1) KrF
Keyword(2) lithography
Keyword(3) high NA
Keyword(4) RET
Keyword(5) ArF
1st Author's Name In-Sung Kim
1st Author's Affiliation Semiconductor R&D Center, Samsung Electronics Co. Ltd.()
2nd Author's Name Jung-Hyeon Lee
2nd Author's Affiliation Semiconductor R&D Center, Samsung Electronics Co. Ltd.
3rd Author's Name Joon-Soo Par
3rd Author's Affiliation Semiconductor R&D Center, Samsung Electronics Co. Ltd.
4th Author's Name Dong-Ho Cha
4th Author's Affiliation Semiconductor R&D Center, Samsung Electronics Co. Ltd.
5th Author's Name Han-Ku Cho
5th Author's Affiliation Semiconductor R&D Center, Samsung Electronics Co. Ltd.
6th Author's Name Joo-Tae Moon
6th Author's Affiliation Semiconductor R&D Center, Samsung Electronics Co. Ltd.
7th Author's Name Sang-In Lee
7th Author's Affiliation Semiconductor R&D Center, Samsung Electronics Co. Ltd.
Date 1999/7/23
Paper # ICD99-114
Volume (vol) vol.99
Number (no) 234
Page pp.pp.-
#Pages 6
Date of Issue