| Presentation | 1999/7/23 The Electrical Properties of Concave-type (Ba,Sr) TiO_3 Capacitors for Advanced Memories Hong-Bae Park, Han-Jin Lim, Chang-Seok Kang, Doo-Sup Hwang, Byoung-Taek Lee, Wan-Don Kim, Hideki Horii, Cha-Young Yoo, Young-Wook Park, Sang-In Lee, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | High-dielectric BST capacitors for Giga-bit DRAM applications were fabricated in a concave-type integration structure. As an electrode material, Pt was deposited by a DC magnetron sputtering method on the patterned TiO_2/SiO_2/Si substrate. Thin BST films were deposited by both the sputtering and MOCVD method using the LDS system. The oxide storage holes were patterned by the reverse photo of normal stacked nodes. All as-deposited capacitors were annealed at 650℃ in a less oxygen atmosphere. Electrical properties such as capacitance, leakage current were measured. It was observed that there was the limitation of sputtered BST capacitors as the storage holes deepen. However, CVD BST capacitors had good step coverage and electrical properties regardless of the storage hole depths. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | High-dielectrics / (Ba,Sr)TiO_3 / concave-type / MOCVD / capacitance / leakage current / step coverage / storage oxide height |
| Paper # | ICD99-112 |
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| Conference Information | |
| Committee | ICD |
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| Conference Date | 1999/7/23(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Integrated Circuits and Devices (ICD) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | The Electrical Properties of Concave-type (Ba,Sr) TiO_3 Capacitors for Advanced Memories |
| Sub Title (in English) | |
| Keyword(1) | High-dielectrics |
| Keyword(2) | (Ba,Sr)TiO_3 |
| Keyword(3) | concave-type |
| Keyword(4) | MOCVD |
| Keyword(5) | capacitance |
| Keyword(6) | leakage current |
| Keyword(7) | step coverage |
| Keyword(8) | storage oxide height |
| 1st Author's Name | Hong-Bae Park |
| 1st Author's Affiliation | Semiconductor R&D Center, Samsung Electronics Co.() |
| 2nd Author's Name | Han-Jin Lim |
| 2nd Author's Affiliation | Semiconductor R&D Center, Samsung Electronics Co. |
| 3rd Author's Name | Chang-Seok Kang |
| 3rd Author's Affiliation | Semiconductor R&D Center, Samsung Electronics Co. |
| 4th Author's Name | Doo-Sup Hwang |
| 4th Author's Affiliation | Semiconductor R&D Center, Samsung Electronics Co. |
| 5th Author's Name | Byoung-Taek Lee |
| 5th Author's Affiliation | Semiconductor R&D Center, Samsung Electronics Co. |
| 6th Author's Name | Wan-Don Kim |
| 6th Author's Affiliation | Semiconductor R&D Center, Samsung Electronics Co. |
| 7th Author's Name | Hideki Horii |
| 7th Author's Affiliation | Semiconductor R&D Center, Samsung Electronics Co. |
| 8th Author's Name | Cha-Young Yoo |
| 8th Author's Affiliation | Semiconductor R&D Center, Samsung Electronics Co. |
| 9th Author's Name | Young-Wook Park |
| 9th Author's Affiliation | Semiconductor R&D Center, Samsung Electronics Co. |
| 10th Author's Name | Sang-In Lee |
| 10th Author's Affiliation | Semiconductor R&D Center, Samsung Electronics Co. |
| Date | 1999/7/23 |
| Paper # | ICD99-112 |
| Volume (vol) | vol.99 |
| Number (no) | 234 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |