Presentation 1999/7/23
Optimization of Postannealing Process for Low Temperature MOCVD (Ba, Sr) TiO_3 Thin Films
Jaehoo Park, Cheol Seong Hwang, Doo Young Yang, Cheol Hoon Yang, Young Ki Han, Chul Ju Hwang,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) 30-run-thick (Ba,Sr)TiO_3 thin films deposited by liquid source MOCVD at 400℃ were post-annealed before top electrode deposition in order to remove the hydrocarbon in thin films. By annealing at a low temperature of 500℃ and a high temperature of 700℃, high dielectric constant (170) an low leakage current density (less than 1.0×10^<-8> A/cm^2 at ±1V) were achieved.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Dielectric Thin film / BST / DRAM / MOCVD / hydrocarbon / multi-step post-annealing
Paper # ICD99-111
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Conference Date 1999/7/23(1days)
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Registration To Integrated Circuits and Devices (ICD)
Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Optimization of Postannealing Process for Low Temperature MOCVD (Ba, Sr) TiO_3 Thin Films
Sub Title (in English)
Keyword(1) Dielectric Thin film
Keyword(2) BST
Keyword(3) DRAM
Keyword(4) MOCVD
Keyword(5) hydrocarbon
Keyword(6) multi-step post-annealing
1st Author's Name Jaehoo Park
1st Author's Affiliation School of Material Science and Engineering, Seoul National University()
2nd Author's Name Cheol Seong Hwang
2nd Author's Affiliation School of Material Science and Engineering, Seoul National University
3rd Author's Name Doo Young Yang
3rd Author's Affiliation Jusung Engineering
4th Author's Name Cheol Hoon Yang
4th Author's Affiliation Jusung Engineering
5th Author's Name Young Ki Han
5th Author's Affiliation Jusung Engineering
6th Author's Name Chul Ju Hwang
6th Author's Affiliation Jusung Engineering
Date 1999/7/23
Paper # ICD99-111
Volume (vol) vol.99
Number (no) 234
Page pp.pp.-
#Pages 4
Date of Issue