| 講演名 | 1999/7/23 Studies on the Formation of SiO_2 Films Using Liquid Phase Deposition Method and Their Basic Characteristics Related with the Application to Electronic Devices , |
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| PDFダウンロードページ | PDFダウンロードページへ |
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| 抄録(英) | This research was dedicated to the investigation of SiO_2 films formed by Liquid Phase Deposition(LPD) method. Because this technique uses room-temperature and no vacuum apparatus to grow SiO_2 films, which gives itself some possibility of the application in ULSI, a thermal stress and the incorporation of unwanted atoms could be avoided in case of LPD method. And then this method uses hydrofluorosilicic acid(H_2SiF_6) as the original growth solution. The growth rate 100nm/hr was obtained at the growth solution of 2.5mol/l. The P-etch rate of LPD-SiO_2 films showed a similar or better tendency compared with usual SiO_2 films. The fourier transform infrared(FTIR) spectra revealed that the contained fluorine atoms exist uniformly throughout the formed SiO_2 films. The Scanning Electron Microscope images showed that LPD-SiO_2 films could be stably grown on silicon substrates and the good step-coverage could also be obtained. And the I-V characteristics has some distinct differences depending on the concentration of growth solution. |
| キーワード(和) | |
| キーワード(英) | Liquid Phase Deposition / Hydrofluorosilicic acid(H_2SiF_6) / Oxidation layer / Multi-interconnect insulator |
| 資料番号 | ICD99-109 |
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| 研究会 | ICD |
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| 開催期間 | 1999/7/23(から1日開催) |
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| 申込み研究会 | Integrated Circuits and Devices (ICD) |
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| 本文の言語 | ENG |
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| タイトル（英） | Studies on the Formation of SiO_2 Films Using Liquid Phase Deposition Method and Their Basic Characteristics Related with the Application to Electronic Devices |
| サブタイトル（和） | |
| キーワード(1)（和/英） | / Liquid Phase Deposition |
| 第 1 著者 氏名（和/英） | / S.K. Lee |
| 第 1 著者 所属（和/英） | Department of Electrical Engineering, College of Engineering, The University of Seoul |
| 発表年月日 | 1999/7/23 |
| 資料番号 | ICD99-109 |
| 巻番号（vol） | vol.99 |
| 号番号（no） | 234 |
| ページ範囲 | pp.- |
| ページ数 | 6 |
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