| Presentation | 1999/7/23 Studies on the Formation of SiO_2 Films Using Liquid Phase Deposition Method and Their Basic Characteristics Related with the Application to Electronic Devices S.K. Lee, C.J. Kim, P. Chanthamaly, N. Haneji, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | This research was dedicated to the investigation of SiO_2 films formed by Liquid Phase Deposition(LPD) method. Because this technique uses room-temperature and no vacuum apparatus to grow SiO_2 films, which gives itself some possibility of the application in ULSI, a thermal stress and the incorporation of unwanted atoms could be avoided in case of LPD method. And then this method uses hydrofluorosilicic acid(H_2SiF_6) as the original growth solution. The growth rate 100nm/hr was obtained at the growth solution of 2.5mol/l. The P-etch rate of LPD-SiO_2 films showed a similar or better tendency compared with usual SiO_2 films. The fourier transform infrared(FTIR) spectra revealed that the contained fluorine atoms exist uniformly throughout the formed SiO_2 films. The Scanning Electron Microscope images showed that LPD-SiO_2 films could be stably grown on silicon substrates and the good step-coverage could also be obtained. And the I-V characteristics has some distinct differences depending on the concentration of growth solution. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Liquid Phase Deposition / Hydrofluorosilicic acid(H_2SiF_6) / Oxidation layer / Multi-interconnect insulator |
| Paper # | ICD99-109 |
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| Conference Information | |
| Committee | ICD |
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| Conference Date | 1999/7/23(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Integrated Circuits and Devices (ICD) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Studies on the Formation of SiO_2 Films Using Liquid Phase Deposition Method and Their Basic Characteristics Related with the Application to Electronic Devices |
| Sub Title (in English) | |
| Keyword(1) | Liquid Phase Deposition |
| Keyword(2) | Hydrofluorosilicic acid(H_2SiF_6) |
| Keyword(3) | Oxidation layer |
| Keyword(4) | Multi-interconnect insulator |
| 1st Author's Name | S.K. Lee |
| 1st Author's Affiliation | Department of Electrical Engineering, College of Engineering, The University of Seoul() |
| 2nd Author's Name | C.J. Kim |
| 2nd Author's Affiliation | Department of Electrical Engineering, College of Engineering, The University of Seoul |
| 3rd Author's Name | P. Chanthamaly |
| 3rd Author's Affiliation | Division of Electrical and Computer Engineering, Faculty of Engineering, Yokohama National University |
| 4th Author's Name | N. Haneji |
| 4th Author's Affiliation | Division of Electrical and Computer Engineering, Faculty of Engineering, Yokohama National University |
| Date | 1999/7/23 |
| Paper # | ICD99-109 |
| Volume (vol) | vol.99 |
| Number (no) | 234 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |