Presentation 1999/7/23
Degradation Behavior in the Remnant Polarization of SrBi_2Ta_2O_9 Thin Films by Hydrogen Annealing and its Recovery by Post-annealing.
Oh Seong Kwon, Cheol Seong Hwang, Suk-Kyoung Hong,
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Abstract(in English) The degradation behavior in the remnant polarization (Pr) of sol-gel-derived SrBi_2Ta_2O_9 (SBT) thin films having Pt top and bottom electrodes by annealing under a 5% H_2/95% N_2 atmosphere is investigated. The hydrogen annealing is performed at temperatures ranging from 250℃ to 480℃. By the annealing, the Pr drops to almost zero for all temperatures. Post-annealing at temperatures higher than 700℃ under an air atmosphere recovers the Pr. Interestingly, the recovery is most ineffective for the sample annealed at the Curie temperature (Tc) of the SBT films. A phenomenological model that explains this anomalous recovery behavior is presented.
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Paper # ICD99-105
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Conference Date 1999/7/23(1days)
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Language ENG
Title (in Japanese) (See Japanese page)
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Title (in English) Degradation Behavior in the Remnant Polarization of SrBi_2Ta_2O_9 Thin Films by Hydrogen Annealing and its Recovery by Post-annealing.
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1st Author's Name Oh Seong Kwon
1st Author's Affiliation School of Material Science and Engineering, Seoul National University()
2nd Author's Name Cheol Seong Hwang
2nd Author's Affiliation School of Material Science and Engineering, Seoul National University
3rd Author's Name Suk-Kyoung Hong
3rd Author's Affiliation Semiconductor Advanced Research Division Hyundai Electronics Industries Co., Ltd.
Date 1999/7/23
Paper # ICD99-105
Volume (vol) vol.99
Number (no) 234
Page pp.pp.-
#Pages 6
Date of Issue