Presentation | 1999/7/23 Degradation Behavior in the Remnant Polarization of SrBi_2Ta_2O_9 Thin Films by Hydrogen Annealing and its Recovery by Post-annealing. Oh Seong Kwon, Cheol Seong Hwang, Suk-Kyoung Hong, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | The degradation behavior in the remnant polarization (Pr) of sol-gel-derived SrBi_2Ta_2O_9 (SBT) thin films having Pt top and bottom electrodes by annealing under a 5% H_2/95% N_2 atmosphere is investigated. The hydrogen annealing is performed at temperatures ranging from 250℃ to 480℃. By the annealing, the Pr drops to almost zero for all temperatures. Post-annealing at temperatures higher than 700℃ under an air atmosphere recovers the Pr. Interestingly, the recovery is most ineffective for the sample annealed at the Curie temperature (Tc) of the SBT films. A phenomenological model that explains this anomalous recovery behavior is presented. |
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Paper # | ICD99-105 |
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Committee | ICD |
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Conference Date | 1999/7/23(1days) |
Place (in Japanese) | (See Japanese page) |
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Registration To | Integrated Circuits and Devices (ICD) |
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Language | ENG |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Degradation Behavior in the Remnant Polarization of SrBi_2Ta_2O_9 Thin Films by Hydrogen Annealing and its Recovery by Post-annealing. |
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1st Author's Name | Oh Seong Kwon |
1st Author's Affiliation | School of Material Science and Engineering, Seoul National University() |
2nd Author's Name | Cheol Seong Hwang |
2nd Author's Affiliation | School of Material Science and Engineering, Seoul National University |
3rd Author's Name | Suk-Kyoung Hong |
3rd Author's Affiliation | Semiconductor Advanced Research Division Hyundai Electronics Industries Co., Ltd. |
Date | 1999/7/23 |
Paper # | ICD99-105 |
Volume (vol) | vol.99 |
Number (no) | 234 |
Page | pp.pp.- |
#Pages | 6 |
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