Presentation	1999/7/23 High Density FRAM Technology KINAM KIM, YOON J. SONG,
PDF Download Page	PDF download Page Link
Abstract(in Japanese)	(See Japanese page)
Abstract(in English)	Ferroelectric random access memory (FRAM) has been considered as a future memory device due to its ideal properties for data storage element. In spite of the rapid progress in FRAM technology, the FRAM devices can not compete with their counterparts of memory devices because of their low density and poor cost-effectiveness. In this paper, FRAM devices are compared to other memory devices with respect of cell area and cell efficiency, and the current integration issues for developing high density FRAM are systematically reviewed, and finally future FRAM technology is suggested.
Keyword(in Japanese)	(See Japanese page)
Keyword(in English)	High density FRAM / integration issues
Paper #	ICD99-104
Date of Issue

Conference Information
Committee	ICD
Conference Date	1999/7/23(1days)
Place (in Japanese)	(See Japanese page)
Place (in English)
Topics (in Japanese)	(See Japanese page)
Topics (in English)
Chair
Vice Chair
Secretary
Assistant

Paper Information
Registration To	Integrated Circuits and Devices (ICD)
Language	ENG
Title (in Japanese)	(See Japanese page)
Sub Title (in Japanese)	(See Japanese page)
Title (in English)	High Density FRAM Technology
Sub Title (in English)
Keyword(1)	High density FRAM
Keyword(2)	integration issues
1st Author's Name	KINAM KIM
1st Author's Affiliation	Technology Development Team, Memory Device Business, Samsung Electronics Co.()
2nd Author's Name	YOON J. SONG
2nd Author's Affiliation	Technology Development Team, Memory Device Business, Samsung Electronics Co.
Date	1999/7/23
Paper #	ICD99-104
Volume (vol)	vol.99
Number (no)	234
Page	pp.pp.-
#Pages	9
Date of Issue