| Presentation | 1999/7/23 Coercive Voltage Shift of a Ferroelectric Capacitor during Interconnect Metal Etch Shin Seung Park, Jun Hub Sun, Kwang Ok Kim, Chan Ro Park, Chang Ju Choi, Yeo Song Seol, II Hyun Choi, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Effects of plasma etching on the characteristics of a SrBi_2Ta_2O_9 (SBT) ferroelectric capacitor with Pi electrodes have been investigated. A TiN film was chosen as an interconnecting metal layer and was etched in an electron cyclotron resonance (ECR) etcher with Cl_2/BCl_3 plasma. The control parameters used for our designed experiments of the metal etch process are RF bias power, microwave source power, and pressure. The etching parameters exert little effects on the remanent polarization and coercive voltage of the ferroelectric capacitor. However, they cause a significant voltage shift in the ferroelectric hysteresis loop. It is found that the voltage shift is induced by electron accumulation during the plasma etching. The electron charging effect is studied using antenna structures and the voltage shift is correlated with electron density of the plasma. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | FeRAM / Ferroelectric capacitor / SrBi_2Ta_2O_9 (SBT) / Interconnect metal etch / Plasma-induced charging / Coercive voltage shift |
| Paper # | ICD99-101 |
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| Committee | ICD |
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| Conference Date | 1999/7/23(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Integrated Circuits and Devices (ICD) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Coercive Voltage Shift of a Ferroelectric Capacitor during Interconnect Metal Etch |
| Sub Title (in English) | |
| Keyword(1) | FeRAM |
| Keyword(2) | Ferroelectric capacitor |
| Keyword(3) | SrBi_2Ta_2O_9 (SBT) |
| Keyword(4) | Interconnect metal etch |
| Keyword(5) | Plasma-induced charging |
| Keyword(6) | Coercive voltage shift |
| 1st Author's Name | Shin Seung Park |
| 1st Author's Affiliation | Memory Research and Development Division, Hyundai Electronics Industries Co., Ltd.() |
| 2nd Author's Name | Jun Hub Sun |
| 2nd Author's Affiliation | Memory Research and Development Division, Hyundai Electronics Industries Co., Ltd. |
| 3rd Author's Name | Kwang Ok Kim |
| 3rd Author's Affiliation | Memory Research and Development Division, Hyundai Electronics Industries Co., Ltd. |
| 4th Author's Name | Chan Ro Park |
| 4th Author's Affiliation | Memory Research and Development Division, Hyundai Electronics Industries Co., Ltd. |
| 5th Author's Name | Chang Ju Choi |
| 5th Author's Affiliation | Memory Research and Development Division, Hyundai Electronics Industries Co., Ltd. |
| 6th Author's Name | Yeo Song Seol |
| 6th Author's Affiliation | Memory Research and Development Division, Hyundai Electronics Industries Co., Ltd. |
| 7th Author's Name | II Hyun Choi |
| 7th Author's Affiliation | Memory Research and Development Division, Hyundai Electronics Industries Co., Ltd. |
| Date | 1999/7/23 |
| Paper # | ICD99-101 |
| Volume (vol) | vol.99 |
| Number (no) | 234 |
| Page | pp.pp.- |
| #Pages | 6 |
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