| 講演名 | 1999/7/23 Fast EM Evaluation by Highly Accelerated Current Density , |
|---|---|
| PDFダウンロードページ | PDFダウンロードページへ |
| 抄録(和) | |
| 抄録(英) | A conventional electromigration (EM) test takes considerably long time because of its limited accelerating condition. Moreover, a process feedback in response to change of integration process, such as the type of metallization stack or intermetallic dielectric (IMD) is rather slow. For the quick turnaround, we evaluated a FAST EM test in which high current density was applied to Al-Cu interconnects as an accelerating factor. From the trend of activation energy (Q), current density factor (n), joule heating, and failure behavior as a function of current density, the current densities lower than 10 MA/cm^2 were found to provide the same failure mechanism as that of a conventional test performed with a current density of ～2 MA/cm^2. For a general application of this fast EM test, the corresponding joule heating was chosen as a criterion of the limit of current density. The fast EM method with highly accelerated current densities was proved to be a powerful tool in evaluating EM quality in a relatively short time. |
| キーワード(和) | |
| キーワード(英) | electromigration / joule heating / current density |
| 資料番号 | ICD99-99 |
| 発行日 |
| 研究会情報 | |
| 研究会 | ICD |
|---|---|
| 開催期間 | 1999/7/23(から1日開催) |
| 開催地（和） | |
| 開催地（英） | |
| テーマ（和） | |
| テーマ（英） | |
| 委員長氏名（和） | |
| 委員長氏名（英） | |
| 副委員長氏名（和） | |
| 副委員長氏名（英） | |
| 幹事氏名（和） | |
| 幹事氏名（英） | |
| 幹事補佐氏名（和） | |
| 幹事補佐氏名（英） | |
| 講演論文情報詳細 | |
| 申込み研究会 | Integrated Circuits and Devices (ICD) |
|---|---|
| 本文の言語 | ENG |
| タイトル（和） | |
| サブタイトル（和） | |
| タイトル（英） | Fast EM Evaluation by Highly Accelerated Current Density |
| サブタイトル（和） | |
| キーワード(1)（和/英） | / electromigration |
| 第 1 著者 氏名（和/英） | / Dong-Chul Kwon |
| 第 1 著者 所属（和/英） | Semiconductor R&D Center, Samsung Electronics Co. LTD. |
| 発表年月日 | 1999/7/23 |
| 資料番号 | ICD99-99 |
| 巻番号（vol） | vol.99 |
| 号番号（no） | 234 |
| ページ範囲 | pp.- |
| ページ数 | 5 |
| 発行日 | |