| Presentation | 1999/7/23 Fast EM Evaluation by Highly Accelerated Current Density Dong-Chul Kwon, Young-Jin Wee, Yun-Ho Park, Hyeon-Deok Lee, Ho-Kyu Kang, Sang-In Lee, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | A conventional electromigration (EM) test takes considerably long time because of its limited accelerating condition. Moreover, a process feedback in response to change of integration process, such as the type of metallization stack or intermetallic dielectric (IMD) is rather slow. For the quick turnaround, we evaluated a FAST EM test in which high current density was applied to Al-Cu interconnects as an accelerating factor. From the trend of activation energy (Q), current density factor (n), joule heating, and failure behavior as a function of current density, the current densities lower than 10 MA/cm^2 were found to provide the same failure mechanism as that of a conventional test performed with a current density of ～2 MA/cm^2. For a general application of this fast EM test, the corresponding joule heating was chosen as a criterion of the limit of current density. The fast EM method with highly accelerated current densities was proved to be a powerful tool in evaluating EM quality in a relatively short time. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | electromigration / joule heating / current density |
| Paper # | ICD99-99 |
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| Conference Information | |
| Committee | ICD |
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| Conference Date | 1999/7/23(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Integrated Circuits and Devices (ICD) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Fast EM Evaluation by Highly Accelerated Current Density |
| Sub Title (in English) | |
| Keyword(1) | electromigration |
| Keyword(2) | joule heating |
| Keyword(3) | current density |
| 1st Author's Name | Dong-Chul Kwon |
| 1st Author's Affiliation | Semiconductor R&D Center, Samsung Electronics Co. LTD.() |
| 2nd Author's Name | Young-Jin Wee |
| 2nd Author's Affiliation | Semiconductor R&D Center, Samsung Electronics Co. LTD. |
| 3rd Author's Name | Yun-Ho Park |
| 3rd Author's Affiliation | Semiconductor R&D Center, Samsung Electronics Co. LTD. |
| 4th Author's Name | Hyeon-Deok Lee |
| 4th Author's Affiliation | Semiconductor R&D Center, Samsung Electronics Co. LTD. |
| 5th Author's Name | Ho-Kyu Kang |
| 5th Author's Affiliation | Semiconductor R&D Center, Samsung Electronics Co. LTD. |
| 6th Author's Name | Sang-In Lee |
| 6th Author's Affiliation | Semiconductor R&D Center, Samsung Electronics Co. LTD. |
| Date | 1999/7/23 |
| Paper # | ICD99-99 |
| Volume (vol) | vol.99 |
| Number (no) | 234 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |