Presentation	1999/7/23 Moisture Induced Hump Characteristics of Shallow Trench-Isolated Sub-1/4μm nMOSFET Sung-Kye Park, Young-Chul Lee, Moon-Sik Suh, Sang-Ho Lee, Hyung J. Lee, Gyu-Han Yoon,
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Abstract(in English)	In this paper, short-channel hump characteristics of nMOSFETs (W/L_=15/0.25um) fabricated with 0.23um STI DRAM technology, induced by moisture not by the field oxide recess, have been firstly investigated. LPCVD TEOS(LP-TEOS) ILD over poly-Si gate of nMOSFETs generates moisture, which isn't diffused out of LP-TEOS layer due to the upper capping SiN layer, generally used for etch stopper layer during formation of the DRAM cell capacitor, but diffuses into the gate edge, and induces short-channel humps. Based on the extensive experimental results, we obviously show that the short-channel hump phenomena are caused by diffusion of moisture from LP-TEOS. To eliminate moisture in the LP-TEOS layer by out-gassing, the vacuum anneal or RTP prior to the deposition of the capping SiN(300Å) layer was carried out. As the result, short-channel humps of nMOSFETs were successfully suppressed.
Keyword(in Japanese)	(See Japanese page)
Keyword(in English)	Short channel hump / STI, ILD moisture / RTP anneal / vacuum anneal / Moisture out-gassing
Paper #	ICD99-98
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Conference Information
Committee	ICD
Conference Date	1999/7/23(1days)
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Paper Information
Registration To	Integrated Circuits and Devices (ICD)
Language	ENG
Title (in Japanese)	(See Japanese page)
Sub Title (in Japanese)	(See Japanese page)
Title (in English)	Moisture Induced Hump Characteristics of Shallow Trench-Isolated Sub-1/4μm nMOSFET
Sub Title (in English)
Keyword(1)	Short channel hump
Keyword(2)	STI, ILD moisture
Keyword(3)	RTP anneal
Keyword(4)	vacuum anneal
Keyword(5)	Moisture out-gassing
1st Author's Name	Sung-Kye Park
1st Author's Affiliation	PG.1, R&D Division, LG Semicon Co. Ltd.()
2nd Author's Name	Young-Chul Lee
2nd Author's Affiliation	PG.1, R&D Division, LG Semicon Co. Ltd.
3rd Author's Name	Moon-Sik Suh
3rd Author's Affiliation	PG.1, R&D Division, LG Semicon Co. Ltd.
4th Author's Name	Sang-Ho Lee
4th Author's Affiliation	PG.1, R&D Division, LG Semicon Co. Ltd.
5th Author's Name	Hyung J. Lee
5th Author's Affiliation	Dept. of Electrical Engineering, Andong National University
6th Author's Name	Gyu-Han Yoon
6th Author's Affiliation	PG.1, R&D Division, LG Semicon Co. Ltd.
Date	1999/7/23
Paper #	ICD99-98
Volume (vol)	vol.99
Number (no)	234
Page	pp.pp.-
#Pages	5
Date of Issue