Presentation 1999/7/23
Dependence of Reverse Narrow Width Effect and Sub-threshold Hump Characteristics on the Gate length
Jong-Wan Jung, Jeong-Hwan Son, Won-Ju Cho, Young-Jong Lee, Kyung-Ho Lee,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) We have found that RNWE and sub-threshold hump characteristics strongly depend on the gate length and the hump get strongest at the gate length at which the threshold voltage is highest. We can explain it by the two effects below. First, as the gate-length gets shorter, the effective boron concentration at channel gets higher by halo and TED. Second, the boron depletion near STI gets higher at short gate-length than at long gate-length. It is because the boron depletion or pile-up is enhanced by TED due to S/D implant damage (interstitial). These two effects both results in the stronger RNWE and threshold hump at short gate-length than at the long gate-length.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) MOSFET / Hump / RNWE / STI / TED / Interstitial
Paper # ICD99-95
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Conference Date 1999/7/23(1days)
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Registration To Integrated Circuits and Devices (ICD)
Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Dependence of Reverse Narrow Width Effect and Sub-threshold Hump Characteristics on the Gate length
Sub Title (in English)
Keyword(1) MOSFET
Keyword(2) Hump
Keyword(3) RNWE
Keyword(4) STI
Keyword(5) TED
Keyword(6) Interstitial
1st Author's Name Jong-Wan Jung
1st Author's Affiliation LG Semicon Co., Ltd.()
2nd Author's Name Jeong-Hwan Son
2nd Author's Affiliation LG Semicon Co., Ltd.
3rd Author's Name Won-Ju Cho
3rd Author's Affiliation LG Semicon Co., Ltd.
4th Author's Name Young-Jong Lee
4th Author's Affiliation LG Semicon Co., Ltd.
5th Author's Name Kyung-Ho Lee
5th Author's Affiliation LG Semicon Co., Ltd.
Date 1999/7/23
Paper # ICD99-95
Volume (vol) vol.99
Number (no) 234
Page pp.pp.-
#Pages 5
Date of Issue