| Presentation | 1999/7/22 A 0.1μm CMOS Technology using W/WN_x/Polysilicon Dual Gate Electrode for 4G DRAM and Beyond Jun-Oh Choi, Sung-Keun Chang, Sang-Hee Lee, Seon-Soon Kim, Yong-Hae Kim, Dae-Hee Hahn, Hyung-Duck Kim, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | A 0.1μm CMOS Technology using W/WN_x/Polysilicon dual gate electrode for 4G DRAM is presented in this paper. The polymetal(W/WN_x/Polysilicon) gate is defined down to 0.12μm and it shows 3.3Ω/□ sheet resistance. We make the surface channel pMOSFET(SC-pMOSFET) with 4.5nm pure oxide gate dielectric. It shows high short channel immunity, no boron penetration and good charge-to-breakdown(Q_ |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | W/WN_x/Polysilicon / 4G DRAM / dual gate electrode / tungsten / surface channel pMOSFET(SC-pMOSFET) |
| Paper # | ICD99-63 |
| Date of Issue |
| Conference Information | |
| Committee | ICD |
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| Conference Date | 1999/7/22(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Integrated Circuits and Devices (ICD) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | A 0.1μm CMOS Technology using W/WN_x/Polysilicon Dual Gate Electrode for 4G DRAM and Beyond |
| Sub Title (in English) | |
| Keyword(1) | W/WN_x/Polysilicon |
| Keyword(2) | 4G DRAM |
| Keyword(3) | dual gate electrode |
| Keyword(4) | tungsten |
| Keyword(5) | surface channel pMOSFET(SC-pMOSFET) |
| 1st Author's Name | Jun-Oh Choi |
| 1st Author's Affiliation | Semiconductor Advanced Research Division, Hyundai Electronics() |
| 2nd Author's Name | Sung-Keun Chang |
| 2nd Author's Affiliation | Semiconductor Advanced Research Division, Hyundai Electronics |
| 3rd Author's Name | Sang-Hee Lee |
| 3rd Author's Affiliation | Semiconductor Advanced Research Division, Hyundai Electronics |
| 4th Author's Name | Seon-Soon Kim |
| 4th Author's Affiliation | Semiconductor Advanced Research Division, Hyundai Electronics |
| 5th Author's Name | Yong-Hae Kim |
| 5th Author's Affiliation | Semiconductor Advanced Research Division, Hyundai Electronics |
| 6th Author's Name | Dae-Hee Hahn |
| 6th Author's Affiliation | Semiconductor Advanced Research Division, Hyundai Electronics |
| 7th Author's Name | Hyung-Duck Kim |
| 7th Author's Affiliation | Semiconductor Advanced Research Division, Hyundai Electronics |
| Date | 1999/7/22 |
| Paper # | ICD99-63 |
| Volume (vol) | vol.99 |
| Number (no) | 233 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |