| Presentation | 1999/1/22 35V Operation High Power AlGaAs/GaAs HFET with a Field-Modulating Plate K. Asano, Y. Miyoshi, K. Ishikura, Y. Nashimoto, M. Kuzuhara, M. Mizuta, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | This paper reports a novel high power AlGaAs/GaAs heterostructure FET with a field-modulating plate(FP-HFET), which accomplished dramatic increase of the gate-drain breakdown voltage with greatly suppressed drain-current pulse-dispersion characteristics. The fabricated FETs exhibited excellent power performance up to 35V at L-band, delivering the maximum power density of 1.7W/mm. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaAs / HFET / Power FET / Breakdown voltage / Frequency dispersion of the Drain current |
| Paper # | ED98-218,MW98-181,ICD98-285 |
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| Conference Information | |
| Committee | ICD |
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| Conference Date | 1999/1/22(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Integrated Circuits and Devices (ICD) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | 35V Operation High Power AlGaAs/GaAs HFET with a Field-Modulating Plate |
| Sub Title (in English) | |
| Keyword(1) | GaAs |
| Keyword(2) | HFET |
| Keyword(3) | Power FET |
| Keyword(4) | Breakdown voltage |
| Keyword(5) | Frequency dispersion of the Drain current |
| 1st Author's Name | K. Asano |
| 1st Author's Affiliation | ULSI Device Development Laboratories, NEC Corporation() |
| 2nd Author's Name | Y. Miyoshi |
| 2nd Author's Affiliation | ULSI Device Development Laboratories, NEC Corporation |
| 3rd Author's Name | K. Ishikura |
| 3rd Author's Affiliation | ULSI Device Development Laboratories, NEC Corporation |
| 4th Author's Name | Y. Nashimoto |
| 4th Author's Affiliation | ULSI Device Development Laboratories, |
| 5th Author's Name | M. Kuzuhara |
| 5th Author's Affiliation | Kansai Electronics Research Laboratories, NEC Corporation |
| 6th Author's Name | M. Mizuta |
| 6th Author's Affiliation | Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation |
| Date | 1999/1/22 |
| Paper # | ED98-218,MW98-181,ICD98-285 |
| Volume (vol) | vol.98 |
| Number (no) | 525 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |