Presentation 1999/1/21
A Ka-band Monolithic Phase Shifter Incorporating Non-Resonant FET Switches
K. Maruhashi, H. Mizutani, K. Ohata,
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Abstract(in English) This paper describes design consideration and performance of a Ka-band monolithic phase shifter utilizing non-resonant FET switches. The switches show broadband on/off characteristics up to 60 GHz without using resonance, thus, robust circuit design is npossible for a switched-line phase shifter. In the circuit design, we introduce a schematic design approach in order to realize desired phase shift as well as good matching characteristics. The developed 4-bit monolithic phase shifter demonstrates an overall phase deviation less than 5° rms and an insertion loss deviation less than 0.65 dB rms from 33 to 35 GHz. For all 16 states, the insertion loss is measured to be 13.1 ± 1.1 dB and the voltage standing wave ratio(VSWR)is less than 1.6.
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Keyword(in English) millimeter-wave / phase shifter / MMIC / switch / phased array
Paper # ED98-208,MW98-171,ICD98-275
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Conference Date 1999/1/21(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
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Title (in English) A Ka-band Monolithic Phase Shifter Incorporating Non-Resonant FET Switches
Sub Title (in English)
Keyword(1) millimeter-wave
Keyword(2) phase shifter
Keyword(3) MMIC
Keyword(4) switch
Keyword(5) phased array
1st Author's Name K. Maruhashi
1st Author's Affiliation Kansai Electronics Research Laboratories, NEC Corp.()
2nd Author's Name H. Mizutani
2nd Author's Affiliation C & C LSI Development Division, NEC Corp.
3rd Author's Name K. Ohata
3rd Author's Affiliation Kansai Electronics Research Laboratories, NEC Corp.
Date 1999/1/21
Paper # ED98-208,MW98-171,ICD98-275
Volume (vol) vol.98
Number (no) 524
Page pp.pp.-
#Pages 7
Date of Issue