Presentation | 1999/1/21 Effects of Parasitic Elements in Large Signal HEMT Modeling Hidehisa Shiomi, Jun Kobayashi, Shigeo Kawasaki, |
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PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | This paper reports the modeling of InP HEMT using the Cold FET method and consideration for the biau dependence of the equivalent circuit parameter. In order to obtain the highly accurated model, the parasitic parameters were decided by Cold FET method and investigated the bias dependence of the large signal equivalent circuit parameter. Making use of Cold FET method, the non-suitable bias dependence of circuit parameter was suppressed. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Modeling / InP HEMT / Large Signal / CAD / Cold FET |
Paper # | ED98-197,MW98-160,ICD98-264 |
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Conference Information | |
Committee | ICD |
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Conference Date | 1999/1/21(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Integrated Circuits and Devices (ICD) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Effects of Parasitic Elements in Large Signal HEMT Modeling |
Sub Title (in English) | |
Keyword(1) | Modeling |
Keyword(2) | InP HEMT |
Keyword(3) | Large Signal |
Keyword(4) | CAD |
Keyword(5) | Cold FET |
1st Author's Name | Hidehisa Shiomi |
1st Author's Affiliation | Tokai University Department of Communication Engineering() |
2nd Author's Name | Jun Kobayashi |
2nd Author's Affiliation | Tokai University Department of Communication Engineering |
3rd Author's Name | Shigeo Kawasaki |
3rd Author's Affiliation | Tokai University Department of Communication Engineering |
Date | 1999/1/21 |
Paper # | ED98-197,MW98-160,ICD98-264 |
Volume (vol) | vol.98 |
Number (no) | 524 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |