Presentation 1999/1/21
Effects of Parasitic Elements in Large Signal HEMT Modeling
Hidehisa Shiomi, Jun Kobayashi, Shigeo Kawasaki,
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Abstract(in English) This paper reports the modeling of InP HEMT using the Cold FET method and consideration for the biau dependence of the equivalent circuit parameter. In order to obtain the highly accurated model, the parasitic parameters were decided by Cold FET method and investigated the bias dependence of the large signal equivalent circuit parameter. Making use of Cold FET method, the non-suitable bias dependence of circuit parameter was suppressed.
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Keyword(in English) Modeling / InP HEMT / Large Signal / CAD / Cold FET
Paper # ED98-197,MW98-160,ICD98-264
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Conference Date 1999/1/21(1days)
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Registration To Integrated Circuits and Devices (ICD)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Effects of Parasitic Elements in Large Signal HEMT Modeling
Sub Title (in English)
Keyword(1) Modeling
Keyword(2) InP HEMT
Keyword(3) Large Signal
Keyword(4) CAD
Keyword(5) Cold FET
1st Author's Name Hidehisa Shiomi
1st Author's Affiliation Tokai University Department of Communication Engineering()
2nd Author's Name Jun Kobayashi
2nd Author's Affiliation Tokai University Department of Communication Engineering
3rd Author's Name Shigeo Kawasaki
3rd Author's Affiliation Tokai University Department of Communication Engineering
Date 1999/1/21
Paper # ED98-197,MW98-160,ICD98-264
Volume (vol) vol.98
Number (no) 524
Page pp.pp.-
#Pages 6
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