| Presentation | 1998/7/23 Models and Technology of Double-Gate SOI MOSFETs Kunihiro Suzuki, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Double-gate SOI MOSFETs were proposed to overcome the bulk MOSFETs' scaling limit.Superb short channel effect immunity, high transconductance, and ideal subthreshold swing have been reported by many theoretical and experimental studies on this device.We summarized our model and technology developed for double gate SOI MOSFETs having various combination of gate dopant type, clarified its prominent device characteristics, and showed a gaidance how to design this device in sub 0.1 μm gate length regime. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | MOSFET / SOI / Double-gate / Scaling theory |
| Paper # | SDM98-79,ICD98-78 |
| Date of Issue |
| Conference Information | |
| Committee | ICD |
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| Conference Date | 1998/7/23(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Integrated Circuits and Devices (ICD) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Models and Technology of Double-Gate SOI MOSFETs |
| Sub Title (in English) | |
| Keyword(1) | MOSFET |
| Keyword(2) | SOI |
| Keyword(3) | Double-gate |
| Keyword(4) | Scaling theory |
| 1st Author's Name | Kunihiro Suzuki |
| 1st Author's Affiliation | Fujitsu Laboratories Ltd.() |
| Date | 1998/7/23 |
| Paper # | SDM98-79,ICD98-78 |
| Volume (vol) | vol.98 |
| Number (no) | 195 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |