Presentation 1998/7/23
Models and Technology of Double-Gate SOI MOSFETs
Kunihiro Suzuki,
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Abstract(in English) Double-gate SOI MOSFETs were proposed to overcome the bulk MOSFETs' scaling limit.Superb short channel effect immunity, high transconductance, and ideal subthreshold swing have been reported by many theoretical and experimental studies on this device.We summarized our model and technology developed for double gate SOI MOSFETs having various combination of gate dopant type, clarified its prominent device characteristics, and showed a gaidance how to design this device in sub 0.1 μm gate length regime.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) MOSFET / SOI / Double-gate / Scaling theory
Paper # SDM98-79,ICD98-78
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Conference Date 1998/7/23(1days)
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Registration To Integrated Circuits and Devices (ICD)
Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Models and Technology of Double-Gate SOI MOSFETs
Sub Title (in English)
Keyword(1) MOSFET
Keyword(2) SOI
Keyword(3) Double-gate
Keyword(4) Scaling theory
1st Author's Name Kunihiro Suzuki
1st Author's Affiliation Fujitsu Laboratories Ltd.()
Date 1998/7/23
Paper # SDM98-79,ICD98-78
Volume (vol) vol.98
Number (no) 195
Page pp.pp.-
#Pages 6
Date of Issue