Presentation 1998/6/19
A Virtual Power/Ground Rails Clamp Scheme for Low Vt CMOS Circuits
Kouichi Kumagai, Hiroaki Iwaki, Hiroshi Yoshida, Hisamitsu Suzuki, Takashi Yamada, Susumu Kurosawa,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) A Virtual power/ground Rails Clamp scheme(VRC) is proposed for leakage current reduction of the low Vt CMOS circuits. With a very simple configuration, it makes possible both the leakage current reduction and the stable data holding in the sleep mode. To demonstrate the effectiveness of the VRC, a 24-bit multiplier-accumulator macro with VRC scheme has been developed using 0.25μm CMOS technology. By employing the VRC scheme, 98% leakage current reduction has been achieved and the stable data holding has been confirmed in the sleep mode, without the speed degradation in the active mode.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) MT-CMOS / low-power / low-voltage / data latch circuit
Paper # ED98-75,SDM98-75,ICD98-74
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Committee ICD
Conference Date 1998/6/19(1days)
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Registration To Integrated Circuits and Devices (ICD)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) A Virtual Power/Ground Rails Clamp Scheme for Low Vt CMOS Circuits
Sub Title (in English)
Keyword(1) MT-CMOS
Keyword(2) low-power
Keyword(3) low-voltage
Keyword(4) data latch circuit
1st Author's Name Kouichi Kumagai
1st Author's Affiliation ULSI Device Development Labs., NEC Corporation()
2nd Author's Name Hiroaki Iwaki
2nd Author's Affiliation ULSI Device Development Labs., NEC Corporation
3rd Author's Name Hiroshi Yoshida
3rd Author's Affiliation ULSI Device Development Labs., NEC Corporation
4th Author's Name Hisamitsu Suzuki
4th Author's Affiliation ULSI Device Development Labs., NEC Corporation
5th Author's Name Takashi Yamada
5th Author's Affiliation ULSI Device Development Labs., NEC Corporation
6th Author's Name Susumu Kurosawa
6th Author's Affiliation ULSI Device Development Labs., NEC Corporation
Date 1998/6/19
Paper # ED98-75,SDM98-75,ICD98-74
Volume (vol) vol.98
Number (no) 121
Page pp.pp.-
#Pages 7
Date of Issue