Presentation 1998/6/19
PLT(Partial Low Threshold)-CMOS scheme for low power applications
Shoichiro Kashiwakura, Tetsuyoshi Shiota, Wataru Shibamoto, Atsuki Inoue, Ryoichi Ohe, Yusuke Matsunaga,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) This paper describes the design method using gates which are partially replaced by low Vth transistors. Using dual Vth transistors in a gate, we can achieve a circuit which is faster at low supply voltage and has small leakage current in a stand-by mode without any area penalty. From simulation result of a 16x16b Mac on our 0.25μm Dual Vth CMOS process, total power dissipartion can be reduced by 24% as compared with conventional circuit.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) low power technology / low voltage / leakage currrent / re-mapping / dual vth transistor
Paper # ED98-74,SDM98-74,ICD98-73
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Conference Date 1998/6/19(1days)
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Registration To Integrated Circuits and Devices (ICD)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) PLT(Partial Low Threshold)-CMOS scheme for low power applications
Sub Title (in English)
Keyword(1) low power technology
Keyword(2) low voltage
Keyword(3) leakage currrent
Keyword(4) re-mapping
Keyword(5) dual vth transistor
1st Author's Name Shoichiro Kashiwakura
1st Author's Affiliation FUJITSU LABORATORIES LIMITED()
2nd Author's Name Tetsuyoshi Shiota
2nd Author's Affiliation FUJITSU LABORATORIES LIMITED
3rd Author's Name Wataru Shibamoto
3rd Author's Affiliation FUJITSU LABORATORIES LIMITED
4th Author's Name Atsuki Inoue
4th Author's Affiliation FUJITSU LABORATORIES LIMITED
5th Author's Name Ryoichi Ohe
5th Author's Affiliation FUJITSU LABORATORIES LIMITED
6th Author's Name Yusuke Matsunaga
6th Author's Affiliation FUJITSU LABORATORIES LIMITED
Date 1998/6/19
Paper # ED98-74,SDM98-74,ICD98-73
Volume (vol) vol.98
Number (no) 121
Page pp.pp.-
#Pages 8
Date of Issue