| Presentation | 1998/6/19 40-GHz frequency dividers with reduced power dissipation fabricated using high-speed, small-emitter-area AlGaAs/InGaAs HBTs Yasushi Amamiya, Takaki Niwa, Nobuo Nagano, Masayuki Mamada, Yasuyuki Suzuki, Hidenori Shimawaki, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | This paper reports 40-GHz frequency dividers with low power dissipation P_diss fabricated using high-performance AlGaAs/InGaAs HBTs. The high-speed performance of small-emitter-area HBTs was markedly improved by analyzing the device delay time and reducing the emitter resistance R_E. An f_T of above 110 GHz and an f_max of 250 GHz were achieved with a small emitter area of 2.7μm^2. A frequency divider fabricated using these high-speed, small-emitter-area HBTs achieved 40-GHz operation with an output voltage of 0.6V_P-P and a low P_diss of 0.9 W. The power dissipation is reduced by 43% compared with that for conventional sized HBTs. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | HBT / low power dissipation / small emitter area / 40-GHz frequency divider |
| Paper # | ED98-70,SDM98-70,ICD98-69 |
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| Conference Information | |
| Committee | ICD |
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| Conference Date | 1998/6/19(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Paper Information | |
| Registration To | Integrated Circuits and Devices (ICD) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | 40-GHz frequency dividers with reduced power dissipation fabricated using high-speed, small-emitter-area AlGaAs/InGaAs HBTs |
| Sub Title (in English) | |
| Keyword(1) | HBT |
| Keyword(2) | low power dissipation |
| Keyword(3) | small emitter area |
| Keyword(4) | 40-GHz frequency divider |
| 1st Author's Name | Yasushi Amamiya |
| 1st Author's Affiliation | Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation() |
| 2nd Author's Name | Takaki Niwa |
| 2nd Author's Affiliation | Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation |
| 3rd Author's Name | Nobuo Nagano |
| 3rd Author's Affiliation | Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation |
| 4th Author's Name | Masayuki Mamada |
| 4th Author's Affiliation | Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation |
| 5th Author's Name | Yasuyuki Suzuki |
| 5th Author's Affiliation | Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation |
| 6th Author's Name | Hidenori Shimawaki |
| 6th Author's Affiliation | Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation |
| Date | 1998/6/19 |
| Paper # | ED98-70,SDM98-70,ICD98-69 |
| Volume (vol) | vol.98 |
| Number (no) | 121 |
| Page | pp.pp.- |
| #Pages | 7 |
| Date of Issue | |