Presentation 1998/6/19
A High Speed and Low Power GaAs Delay Flip-Flop
H Satoh, T Enomoto, A Hirobe, T Iwata, M Oh-hashi, M Fujii, N Yoshida, S Asai,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) A delay flip-flop(D-FF)was fabricated by using 0.25μm GaAs HJFET technology. The chip size is 592×662μm^2 and an active area is 113×178μm^2. The maximum operating clock frequencies(f_mc)of this D-FF was 7.15GHz at 1.1V supply voltages(V_dd). Clear, wide eye openings were obtained in a f_mc range up to 7.15GHz. Operating speeds were confirmed at an error rate of less than 10^-9 with a(2^9-1)pseudo-random signal. This D-FF operated at 5GHz on V_dd=0.58V, and its power dissipation was 1.93mW, which is the world lowest power dissipation.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) GaAs HJFET / Delay Flip-Flop / Latch
Paper # ED98-69,SDM98-69,ICD98-68
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Conference Date 1998/6/19(1days)
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Paper Information
Registration To Integrated Circuits and Devices (ICD)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) A High Speed and Low Power GaAs Delay Flip-Flop
Sub Title (in English)
Keyword(1) GaAs HJFET
Keyword(2) Delay Flip-Flop
Keyword(3) Latch
1st Author's Name H Satoh
1st Author's Affiliation Chuo University()
2nd Author's Name T Enomoto
2nd Author's Affiliation Chuo University
3rd Author's Name A Hirobe
3rd Author's Affiliation Chuo University
4th Author's Name T Iwata
4th Author's Affiliation Chuo University
5th Author's Name M Oh-hashi
5th Author's Affiliation Chuo University
6th Author's Name M Fujii
6th Author's Affiliation NEC Corporation
7th Author's Name N Yoshida
7th Author's Affiliation NEC Corporation
8th Author's Name S Asai
8th Author's Affiliation NEC Corporation
Date 1998/6/19
Paper # ED98-69,SDM98-69,ICD98-68
Volume (vol) vol.98
Number (no) 121
Page pp.pp.-
#Pages 8
Date of Issue