Presentation 1998/6/19
A 5.3GB/s embedded SDRAM core with slightly boosting scheme
H Noda, A Yamazaki, T Yamagata, I Hayashi, K Arimoto, M Yamada,
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Abstract(in English) It is a key issue to improve transistor performance for developing system LSIs. This paper proposes a slightly boosting scheme which reduces the boosted voltage(V_PP)for the word line voltage to almost the same level as the external power supply(V_CC). Using this scheme, and embedded SDRAM core, which operates at a 166MHz clock frequency and achieves 4 cycles of RAS latency, has been developed. The block write operation for graphic applications and the test circuit built in the core for testing the DRAM core directly are also introduced.
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Keyword(in English) embedded DRAM / slightly boosting / block write / test circuit
Paper # ED98-64,SDM98-64,ICD98-63
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Conference Date 1998/6/19(1days)
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Registration To Integrated Circuits and Devices (ICD)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) A 5.3GB/s embedded SDRAM core with slightly boosting scheme
Sub Title (in English)
Keyword(1) embedded DRAM
Keyword(2) slightly boosting
Keyword(3) block write
Keyword(4) test circuit
1st Author's Name H Noda
1st Author's Affiliation ULSI Development Center, Mitsubishi Electric Corp.()
2nd Author's Name A Yamazaki
2nd Author's Affiliation ULSI Development Center, Mitsubishi Electric Corp.
3rd Author's Name T Yamagata
3rd Author's Affiliation ULSI Development Center, Mitsubishi Electric Corp.
4th Author's Name I Hayashi
4th Author's Affiliation ULSI Development Center, Mitsubishi Electric Corp.
5th Author's Name K Arimoto
5th Author's Affiliation ULSI Development Center, Mitsubishi Electric Corp.
6th Author's Name M Yamada
6th Author's Affiliation ULSI Development Center, Mitsubishi Electric Corp.
Date 1998/6/19
Paper # ED98-64,SDM98-64,ICD98-63
Volume (vol) vol.98
Number (no) 121
Page pp.pp.-
#Pages 6
Date of Issue