| Presentation | 1995/5/26 32Mb AND Flash Memory Atsushi Nozoe, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Single 3.3V supply 32Mbit AND type flash memory has been fabricated. It can handle the data strictly sector by sector (512B/Sector). This ability increases repair efficiency and makes the management of ware-out sector address much easier. AND type cell is suitable for both high density and high speed application. Thus, this chip implement both random byte access mode and serial sector access mode. 1ms/512B erase and program has been realized by means of variable pulse width method. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Flash Memory / AND-memory cell / Serial・Random Access Mode |
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| Conference Information | |
| Committee | ICD |
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| Conference Date | 1995/5/26(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Integrated Circuits and Devices (ICD) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | 32Mb AND Flash Memory |
| Sub Title (in English) | |
| Keyword(1) | Flash Memory |
| Keyword(2) | AND-memory cell |
| Keyword(3) | Serial・Random Access Mode |
| 1st Author's Name | Atsushi Nozoe |
| 1st Author's Affiliation | Device Development Center, Hitachi, Ltd.() |
| Date | 1995/5/26 |
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| Volume (vol) | vol.95 |
| Number (no) | 72 |
| Page | pp.pp.- |
| #Pages | 6 |
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