Presentation 1995/5/26
A 0.9V Embedded Ferroelectric Memory for Microcontrollers
Hiroshige Hirano, Tatsumi Sumi, Masamichi Azuma, Tatsuo Otsuki, John Gregory, A.Paz De Carlos Araujo,
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Abstract(in English) This work demonstrates application of ferroelectric technology in the embedded "system-on-chip" area. The focus of this paper is twofold : (1)Optimization of the material properties and cell design to achieve 0.9V operation with fully-saturated hysteresis loops and new ferroelectric capacitor model ; and, (2)Demonstration of overall "system-on-chip" device architecture and operation using the ferroelectric memory in an embedded environment.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Ferroelectric / Capacitor model / Low voltage operation / Architecture
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Conference Date 1995/5/26(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
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Title (in English) A 0.9V Embedded Ferroelectric Memory for Microcontrollers
Sub Title (in English)
Keyword(1) Ferroelectric
Keyword(2) Capacitor model
Keyword(3) Low voltage operation
Keyword(4) Architecture
1st Author's Name Hiroshige Hirano
1st Author's Affiliation Kyoto Research Laboratory, Matsushita Electronics Corporation()
2nd Author's Name Tatsumi Sumi
2nd Author's Affiliation Kyoto Research Laboratory, Matsushita Electronics Corporation
3rd Author's Name Masamichi Azuma
3rd Author's Affiliation Kyoto Research Laboratory, Matsushita Electronics Corporation
4th Author's Name Tatsuo Otsuki
4th Author's Affiliation Kyoto Research Laboratory, Matsushita Electronics Corporation
5th Author's Name John Gregory
5th Author's Affiliation Symetrix Corporation
6th Author's Name A.Paz De Carlos Araujo
6th Author's Affiliation University of Colorado
Date 1995/5/26
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Volume (vol) vol.95
Number (no) 72
Page pp.pp.-
#Pages 5
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