Presentation | 1995/5/25 An NTL-CMOS SRAM Macro Using a CMOS Memory Cell with PMOS Access Transistors Hitoshi Okamura, Hideo Toyoshima, Koichi Takeda, Takashi Oguri, Satoshi Nakamura, Masahide Takada, Kiyotaka Imai, Yasushi Kinoshita, Hiroshi Yoshida, Toru Yamazaki, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | An ECL-CMOS SRAM has enabled the ultra high speed and high density features simultaneously. However, it consumes a lot of power and is hard to be applied for a low supply voltage operating application. This paper describes an NTL-CMOS SRAM macro using a CMOS memory cell with PMOS access transistors, an NTL decoder with an on-chip voltage generator and an automatic bit line signal voltage swing controller. A 32Kb SRAM macro has been developed using a 0.4μm BiCMOS technology, which achieves 1ns access time at 2.5V of power supply voltage with 1W power consumption. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | SRAM / MEMORY CELL / BiCMOS / ECL / NTL / LOW SUPPLY VOLTAGE |
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Conference Information | |
Committee | ICD |
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Conference Date | 1995/5/25(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | |
Chair | |
Vice Chair | |
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Paper Information | |
Registration To | Integrated Circuits and Devices (ICD) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | An NTL-CMOS SRAM Macro Using a CMOS Memory Cell with PMOS Access Transistors |
Sub Title (in English) | |
Keyword(1) | SRAM |
Keyword(2) | MEMORY CELL |
Keyword(3) | BiCMOS |
Keyword(4) | ECL |
Keyword(5) | NTL |
Keyword(6) | LOW SUPPLY VOLTAGE |
1st Author's Name | Hitoshi Okamura |
1st Author's Affiliation | NEC Corporation System ASIC Department() |
2nd Author's Name | Hideo Toyoshima |
2nd Author's Affiliation | NEC Microelectronics Research Laboratories |
3rd Author's Name | Koichi Takeda |
3rd Author's Affiliation | NEC Microelectronics Research Laboratories |
4th Author's Name | Takashi Oguri |
4th Author's Affiliation | NEC Microelectronics Research Laboratories |
5th Author's Name | Satoshi Nakamura |
5th Author's Affiliation | NEC Microelectronics Research Laboratories |
6th Author's Name | Masahide Takada |
6th Author's Affiliation | NEC Microelectronics Research Laboratories |
7th Author's Name | Kiyotaka Imai |
7th Author's Affiliation | NEC ULSI Device Development Laboratories |
8th Author's Name | Yasushi Kinoshita |
8th Author's Affiliation | NEC ULSI Device Development Laboratories |
9th Author's Name | Hiroshi Yoshida |
9th Author's Affiliation | NEC ULSI Device Development Laboratories |
10th Author's Name | Toru Yamazaki |
10th Author's Affiliation | NEC ULSI Device Development Laboratories |
Date | 1995/5/25 |
Paper # | |
Volume (vol) | vol.95 |
Number (no) | 71 |
Page | pp.pp.- |
#Pages | 7 |
Date of Issue |