| Presentation | 1995/5/25 A 1.6GB/s Data-Transfer-Rate 8Mb Embedded DRAM Masaharu Wada, Katsuhiko Sato, Tomoaki Yabe, Ryo Haga, Motohiro Enkaku, Masahisa Ohgata, Sinji Miyano, Kenji Numata, Hiroshi Shinya, Tohru Furuyama, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | A 3.3V 8Mb embedded DRAM achieves a 1.6GB/s data transfer rate and page-fault tolerance. Accessing across different pages is performed in a minimum column cycle using a data latch between sense amplifier and column select gate connect to global-data-line. High bandwidth is achieved with a 128b data bus operating at 100MHz. The 113mm^2 DRAM macro is embedded in a sea of gate in 0.5μm CMOS two metal technology. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | DRAM / CMOS / Embedded-Memory / Gate-Array |
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| Conference Information | |
| Committee | ICD |
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| Conference Date | 1995/5/25(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Registration To | Integrated Circuits and Devices (ICD) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | A 1.6GB/s Data-Transfer-Rate 8Mb Embedded DRAM |
| Sub Title (in English) | |
| Keyword(1) | DRAM |
| Keyword(2) | CMOS |
| Keyword(3) | Embedded-Memory |
| Keyword(4) | Gate-Array |
| 1st Author's Name | Masaharu Wada |
| 1st Author's Affiliation | SEMICONDUCTOR DEVICE ENGINEERING LABORATORY TOSHIBA CORPORATION() |
| 2nd Author's Name | Katsuhiko Sato |
| 2nd Author's Affiliation | SEMICONDUCTOR DEVICE ENGINEERING LABORATORY TOSHIBA CORPORATION |
| 3rd Author's Name | Tomoaki Yabe |
| 3rd Author's Affiliation | SEMICONDUCTOR DEVICE ENGINEERING LABORATORY TOSHIBA CORPORATION |
| 4th Author's Name | Ryo Haga |
| 4th Author's Affiliation | SEMICONDUCTOR DEVICE ENGINEERING LABORATORY TOSHIBA CORPORATION |
| 5th Author's Name | Motohiro Enkaku |
| 5th Author's Affiliation | SEMICONDUCTOR DEVICE ENGINEERING LABORATORY TOSHIBA CORPORATION |
| 6th Author's Name | Masahisa Ohgata |
| 6th Author's Affiliation | SEMICONDUCTOR DEVICE ENGINEERING LABORATORY TOSHIBA CORPORATION |
| 7th Author's Name | Sinji Miyano |
| 7th Author's Affiliation | SEMICONDUCTOR DEVICE ENGINEERING LABORATORY TOSHIBA CORPORATION |
| 8th Author's Name | Kenji Numata |
| 8th Author's Affiliation | SEMICONDUCTOR DEVICE ENGINEERING LABORATORY TOSHIBA CORPORATION |
| 9th Author's Name | Hiroshi Shinya |
| 9th Author's Affiliation | SEMICONDUCTOR DEVICE ENGINEERING LABORATORY TOSHIBA CORPORATION |
| 10th Author's Name | Tohru Furuyama |
| 10th Author's Affiliation | SEMICONDUCTOR DEVICE ENGINEERING LABORATORY TOSHIBA CORPORATION |
| Date | 1995/5/25 |
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| Volume (vol) | vol.95 |
| Number (no) | 71 |
| Page | pp.pp.- |
| #Pages | 6 |
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