Presentation 1995/5/25
Circuit Design Techniques for Low Voltage Operating And/Or Giga-Scale DRAMs
Takahiro Tsuruda, Tadato Yamagata, Shigeki Tomishima, Masaki Tsukude, Yasushi Hashizume, Kazutami Arimoto,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) This paper describes a Charge-Transferred Well Sensing method for a high-speed array circuit operation and a Level-Controllable Local Power Line Structure for a high-speed / low-power operation of peripheral circuit, for low-voltage and giga-scale DRAMs. A Negative-voltage word line technique is also discussed for long data retention time and high reliability. An experimental 1.2V 49ns 16Mbit-DRAM has been successfully developed using these technologies and a 0.4-μm CMOS process.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) DRAM / Low-voltage / Low-power / Sense amplifier / Hierarchical power line / Negative-voltage word line
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Conference Date 1995/5/25(1days)
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Registration To Integrated Circuits and Devices (ICD)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Circuit Design Techniques for Low Voltage Operating And/Or Giga-Scale DRAMs
Sub Title (in English)
Keyword(1) DRAM
Keyword(2) Low-voltage
Keyword(3) Low-power
Keyword(4) Sense amplifier
Keyword(5) Hierarchical power line
Keyword(6) Negative-voltage word line
1st Author's Name Takahiro Tsuruda
1st Author's Affiliation ULSI Laboratory Mitsubishi Electric Corporation()
2nd Author's Name Tadato Yamagata
2nd Author's Affiliation ULSI Laboratory Mitsubishi Electric Corporation
3rd Author's Name Shigeki Tomishima
3rd Author's Affiliation ULSI Laboratory Mitsubishi Electric Corporation
4th Author's Name Masaki Tsukude
4th Author's Affiliation ULSI Laboratory Mitsubishi Electric Corporation
5th Author's Name Yasushi Hashizume
5th Author's Affiliation ULSI Laboratory Mitsubishi Electric Corporation
6th Author's Name Kazutami Arimoto
6th Author's Affiliation ULSI Laboratory Mitsubishi Electric Corporation
Date 1995/5/25
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Volume (vol) vol.95
Number (no) 71
Page pp.pp.-
#Pages 7
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