| Presentation | 1995/5/25 A 1-Gb DRAM for File Applications Tadahiko Sugibayashi, Isao Naritake, Satoshi Utsugi, Kentaro Shibahara, Ryuichi Oikawa, Hidemitsu Mori, Shouichi Iwao, Tatsunori Murotani, Kuniaki Koyama, Shinichi Fukuzawa, Toshiro Itani, Kunihiko Kasama, Takashi Okuda, Shuichi Ohya, Masaki Ogawa, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | For 1-Gb DRAMs, a time shared offset cancel sensing scheme, a defective word-line Hi-Z standby scheme and flexible multi-macro architecture have been developed. A 1-Gb DRAM has been developed adopting a diagonal bit-line cell, a two-stage pipeline circuit technique and the developed circuitry. In the DRAM, a 30% chip size reduction, a 400MB/s data transfer rate and a 100% improvement in yield have been achieved, compared with conventional DRAM circuits. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | DRAM / File Application / 1Gb / Macro / Standby Current |
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| Conference Information | |
| Committee | ICD |
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| Conference Date | 1995/5/25(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Registration To | Integrated Circuits and Devices (ICD) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | A 1-Gb DRAM for File Applications |
| Sub Title (in English) | |
| Keyword(1) | DRAM |
| Keyword(2) | File Application |
| Keyword(3) | 1Gb |
| Keyword(4) | Macro |
| Keyword(5) | Standby Current |
| 1st Author's Name | Tadahiko Sugibayashi |
| 1st Author's Affiliation | NEC Corporation, ULSI Device Development Labs.() |
| 2nd Author's Name | Isao Naritake |
| 2nd Author's Affiliation | NEC Corporation, ULSI Device Development Labs. |
| 3rd Author's Name | Satoshi Utsugi |
| 3rd Author's Affiliation | NEC Corporation, ULSI Device Development Labs. |
| 4th Author's Name | Kentaro Shibahara |
| 4th Author's Affiliation | NEC Corporation, ULSI Device Development Labs. |
| 5th Author's Name | Ryuichi Oikawa |
| 5th Author's Affiliation | NEC Corporation, ULSI Device Development Labs. |
| 6th Author's Name | Hidemitsu Mori |
| 6th Author's Affiliation | NEC Corporation, ULSI Device Development Labs. |
| 7th Author's Name | Shouichi Iwao |
| 7th Author's Affiliation | NEC Corporation, ULSI Device Development Labs. |
| 8th Author's Name | Tatsunori Murotani |
| 8th Author's Affiliation | NEC Corporation, ULSI Device Development Labs. |
| 9th Author's Name | Kuniaki Koyama |
| 9th Author's Affiliation | NEC Corporation, ULSI Device Development Labs. |
| 10th Author's Name | Shinichi Fukuzawa |
| 10th Author's Affiliation | NEC Corporation, ULSI Device Development Labs. |
| 11th Author's Name | Toshiro Itani |
| 11th Author's Affiliation | NEC Corporation, ULSI Device Development Labs. |
| 12th Author's Name | Kunihiko Kasama |
| 12th Author's Affiliation | NEC Corporation, ULSI Device Development Labs. |
| 13th Author's Name | Takashi Okuda |
| 13th Author's Affiliation | NEC Corporation, ULSI Device Development Labs. |
| 14th Author's Name | Shuichi Ohya |
| 14th Author's Affiliation | NEC Corporation, ULSI Device Development Labs. |
| 15th Author's Name | Masaki Ogawa |
| 15th Author's Affiliation | NEC Corporation, ULSI Device Development Labs. |
| Date | 1995/5/25 |
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| Volume (vol) | vol.95 |
| Number (no) | 71 |
| Page | pp.pp.- |
| #Pages | 8 |
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