| Presentation | 1993/8/20 Silicon Integrated Injecton Logic Operating up to 454℃. Masatoshi Migitaka, Kohei Kurachi, Hirotoshi Naito, Minoru Harada, Masayoshi Takeuchi, Hiroki Kawakami, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | In order to develop silicon lCs operating up to above 450£℃!,an Integrated Injection Logic (IIL) was chosen as an example.A new structure for the IIL was designed through experimental and theoretical studies of pn junctions and transistors at high temperatures.The maximum operating temperature was 454£℃! on the IIL made by 5£μm! designed rule.The newly designed IIL was fabric ated by newly developed combined processes of ion implantation and low temperature epitaxy.The developed IIL was fully operational from room temperature to 454£℃!,and the signal swing of a nine-st age ring oscillator was about 30£mV!at 454£℃!.The delay time of the IIL decreased to at most one-third of the previous device of 10£μm! rule for the same operating power at 50£℃!.Also,a full a dder of a 2-bit microcomputer was designed using the designed IIL The fabricated full adder operated normally from room temperature to 250£℃! and did not degrade in 4000£hours! at 250£℃!. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | IIL / High temparature IC / pn junction / Iow temperature epitaxy / ion implantation |
| Paper # | ICD93-72 |
| Date of Issue |
| Conference Information | |
| Committee | ICD |
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| Conference Date | 1993/8/20(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Integrated Circuits and Devices (ICD) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Silicon Integrated Injecton Logic Operating up to 454℃. |
| Sub Title (in English) | |
| Keyword(1) | IIL |
| Keyword(2) | High temparature IC |
| Keyword(3) | pn junction |
| Keyword(4) | Iow temperature epitaxy |
| Keyword(5) | ion implantation |
| 1st Author's Name | Masatoshi Migitaka |
| 1st Author's Affiliation | Toyota Technological Institute() |
| 2nd Author's Name | Kohei Kurachi |
| 2nd Author's Affiliation | Toyota Technological Institute |
| 3rd Author's Name | Hirotoshi Naito |
| 3rd Author's Affiliation | Toyota Technological Institute |
| 4th Author's Name | Minoru Harada |
| 4th Author's Affiliation | Toyota Technological Institute |
| 5th Author's Name | Masayoshi Takeuchi |
| 5th Author's Affiliation | AISIN SEIKI Co.,Ltd. |
| 6th Author's Name | Hiroki Kawakami |
| 6th Author's Affiliation | Yokogawa Electric Corporation |
| Date | 1993/8/20 |
| Paper # | ICD93-72 |
| Volume (vol) | vol.93 |
| Number (no) | 188 |
| Page | pp.pp.- |
| #Pages | 8 |
| Date of Issue | |