| Presentation | 1996/5/24 A 3.3V-only 16GMb Flash Memory with a new Row-Decoding Scheme Hironori Banba, Akira Umezawa, Masao Kuriyama, Nobuaki Ohtsuka, Naoto Tomita, Yumiko Iyama, Takeshi Miyaba, Ryo Sudo, Eiji Kamiya, Masao Tanimoto, Yohei Hiura, Yoshiko Araki, Eiji Sakagami, Norihisa Arai, Shigeru Atsumi, Seiichi Mori, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | A 3.3V-only fast random access time 16M flash memory with a new row decoding scheme is developed. This devis is fabiricated using 0.4μm double well CMOS double metal technology. A negative gate biasd erase scheme is implemented to enable 3.3V-only operation. A high performance cherge pump circut is designed for minimize charge pump circuit area. A row decoder circuit with novel level shifter scheme is implemented for stress relaxation during negative gate biased erase operation. A new row redundancy scheme with self-convergence is developed to improve the yied. Quasi-differential sensing with address transition detection is incorporated in the design to obtain fast random access time. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Flash EEPROM / negative gate biased erase / charge pump / 3.3V-only operation |
| Paper # | ICD96-43 |
| Date of Issue |
| Conference Information | |
| Committee | ICD |
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| Conference Date | 1996/5/24(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Integrated Circuits and Devices (ICD) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | A 3.3V-only 16GMb Flash Memory with a new Row-Decoding Scheme |
| Sub Title (in English) | |
| Keyword(1) | Flash EEPROM |
| Keyword(2) | negative gate biased erase |
| Keyword(3) | charge pump |
| Keyword(4) | 3.3V-only operation |
| 1st Author's Name | Hironori Banba |
| 1st Author's Affiliation | ULSI Device Engineering Laboratory, Toshiba Corporation() |
| 2nd Author's Name | Akira Umezawa |
| 2nd Author's Affiliation | ULSI Device Engineering Laboratory, Toshiba Corporation |
| 3rd Author's Name | Masao Kuriyama |
| 3rd Author's Affiliation | ULSI Device Engineering Laboratory, Toshiba Corporation |
| 4th Author's Name | Nobuaki Ohtsuka |
| 4th Author's Affiliation | ULSI Device Engineering Laboratory, Toshiba Corporation |
| 5th Author's Name | Naoto Tomita |
| 5th Author's Affiliation | ULSI Device Engineering Laboratory, Toshiba Corporation |
| 6th Author's Name | Yumiko Iyama |
| 6th Author's Affiliation | Toshiba Microelectronics |
| 7th Author's Name | Takeshi Miyaba |
| 7th Author's Affiliation | Toshiba Microelectronics |
| 8th Author's Name | Ryo Sudo |
| 8th Author's Affiliation | ULSI Device Engineering Laboratory, Toshiba Corporation |
| 9th Author's Name | Eiji Kamiya |
| 9th Author's Affiliation | ULSI Device Engineering Laboratory, Toshiba Corporation |
| 10th Author's Name | Masao Tanimoto |
| 10th Author's Affiliation | ULSI Device Engineering Laboratory, Toshiba Corporation |
| 11th Author's Name | Yohei Hiura |
| 11th Author's Affiliation | ULSI Device Engineering Laboratory, Toshiba Corporation |
| 12th Author's Name | Yoshiko Araki |
| 12th Author's Affiliation | ULSI Device Engineering Laboratory, Toshiba Corporation |
| 13th Author's Name | Eiji Sakagami |
| 13th Author's Affiliation | ULSI Device Engineering Laboratory, Toshiba Corporation |
| 14th Author's Name | Norihisa Arai |
| 14th Author's Affiliation | Toshiba Microelectronics |
| 15th Author's Name | Shigeru Atsumi |
| 15th Author's Affiliation | ULSI Device Engineering Laboratory, Toshiba Corporation |
| 16th Author's Name | Seiichi Mori |
| 16th Author's Affiliation | ULSI Device Engineering Laboratory, Toshiba Corporation |
| Date | 1996/5/24 |
| Paper # | ICD96-43 |
| Volume (vol) | vol.96 |
| Number (no) | 65 |
| Page | pp.pp.- |
| #Pages | 7 |
| Date of Issue | |