Presentation 1996/9/27
Low-Power ULSI Design using the E_b/N_o-BER Characteristics
T. Sagitani, K. Masu, K. Tsubouchi,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) A novel approach to low-power ULSl design from the stand point of E_b/N_o-BER characteristics has been proposed. E_b/N_o-BER characteristics are often used for system design in the field of communication engineering. We have confirmed that the E_b/N_o-BER curve of CMOS circuit coincides with the theoretical curve. Using the E_b/N_o-BER characteristics, the design of minimum supply voltage of CMOS with white noise is discussed.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) low-Power ULSI / E_b/N_o-BER curve / supply voltage
Paper # ICD96-132
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Conference Date 1996/9/27(1days)
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Registration To Integrated Circuits and Devices (ICD)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Low-Power ULSI Design using the E_b/N_o-BER Characteristics
Sub Title (in English)
Keyword(1) low-Power ULSI
Keyword(2) E_b/N_o-BER curve
Keyword(3) supply voltage
1st Author's Name T. Sagitani
1st Author's Affiliation Research Institute of Electrical Communication, Tohoku University()
2nd Author's Name K. Masu
2nd Author's Affiliation Research Institute of Electrical Communication, Tohoku University
3rd Author's Name K. Tsubouchi
3rd Author's Affiliation Research Institute of Electrical Communication, Tohoku University
Date 1996/9/27
Paper # ICD96-132
Volume (vol) vol.96
Number (no) 267
Page pp.pp.-
#Pages 8
Date of Issue