Presentation 1998/1/23
High-Speed Digital Circuits using Resonant Tunneling Diodes and HEMTs
H. Matsuzaki, K. Arai, K. Maezawa, M. Yamamoto, T. Otsuji,
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Abstract(in English) We demonstrated high-speed operation for logic circuits with resonant tunneling diode/HEMT-based logic gates, called MOBILEs. The toggle frequency of the fabricated circuits is close to the current gain cutoff frequency of the 0.7-mm gate HEMT in the circuit. This is due to the simplified circuit configurations using the negative differential resistance characteristics of the RTDs. As well as high-speed operation, these circuits feature low power consumption because the device counts in the circuits are very small. The power consumption in each circuit is estimated to be less than 10mW.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) resonant tunneling diode / HEMT / flip-flop / frequency divider / InP / InGaAs
Paper # ICD97-212
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Conference Date 1998/1/23(1days)
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Registration To Integrated Circuits and Devices (ICD)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) High-Speed Digital Circuits using Resonant Tunneling Diodes and HEMTs
Sub Title (in English)
Keyword(1) resonant tunneling diode
Keyword(2) HEMT
Keyword(3) flip-flop
Keyword(4) frequency divider
Keyword(5) InP
Keyword(6) InGaAs
1st Author's Name H. Matsuzaki
1st Author's Affiliation NTT System Electronics Laboratories()
2nd Author's Name K. Arai
2nd Author's Affiliation NTT System Electronics Laboratories
3rd Author's Name K. Maezawa
3rd Author's Affiliation NTT System Electronics Laboratories:(Present address)Faculty of Engineering, Nagoya University
4th Author's Name M. Yamamoto
4th Author's Affiliation NTT System Electronics Laboratories
5th Author's Name T. Otsuji
5th Author's Affiliation NTT Optical Network Systems Laboratories
Date 1998/1/23
Paper # ICD97-212
Volume (vol) vol.97
Number (no) 482
Page pp.pp.-
#Pages 6
Date of Issue