| Presentation | 1998/1/21 Ku, K-Band Power HEMT with WSi/Au T-Shaped Gate T. Kunii, N. Yoshida, S. Miyakuni, T. Shiga, T. Oku, A. Inoue, J. Udomoto, M. Komaru, S. Tsuji, T. Ishikawa, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We developed WSi/Au T-shaped buried gate pseudomorphic HEMTs with the good uniformity of recess current by using selective etching process and a high off-state break down voltage of over 19V. A 1.4W output power has been obtained with a power-added efficiency of 55.6% and an associated gain of 9.2dB under a high voltage operation of Vd=10V at 18GHz. A 21mm internally-matched HEMT has demonstrated an output power of 10.5W with a power-added efficiency of 54% and an linear gain of 9.8dB at 12GHz. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | HEMT / High efficiency / Power amplifier / GaAs |
| Paper # | ICD97-201 |
| Date of Issue |
| Conference Information | |
| Committee | ICD |
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| Conference Date | 1998/1/21(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Integrated Circuits and Devices (ICD) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Ku, K-Band Power HEMT with WSi/Au T-Shaped Gate |
| Sub Title (in English) | |
| Keyword(1) | HEMT |
| Keyword(2) | High efficiency |
| Keyword(3) | Power amplifier |
| Keyword(4) | GaAs |
| 1st Author's Name | T. Kunii |
| 1st Author's Affiliation | Mitsubishi Electric Corporation Optoelectronic & Microwave Devices Laboratory() |
| 2nd Author's Name | N. Yoshida |
| 2nd Author's Affiliation | Mitsubishi Electric Corporation Optoelectronic & Microwave Devices Laboratory |
| 3rd Author's Name | S. Miyakuni |
| 3rd Author's Affiliation | Mitsubishi Electric Corporation Optoelectronic & Microwave Devices Laboratory |
| 4th Author's Name | T. Shiga |
| 4th Author's Affiliation | Mitsubishi Electric Corporation High Frequency & Optical Semiconductor Div. |
| 5th Author's Name | T. Oku |
| 5th Author's Affiliation | Mitsubishi Electric Corporation Optoelectronic & Microwave Devices Laboratory |
| 6th Author's Name | A. Inoue |
| 6th Author's Affiliation | Mitsubishi Electric Corporation Optoelectronic & Microwave Devices Laboratory |
| 7th Author's Name | J. Udomoto |
| 7th Author's Affiliation | Mitsubishi Electric Corporation Optoelectronic & Microwave Devices Laboratory |
| 8th Author's Name | M. Komaru |
| 8th Author's Affiliation | Mitsubishi Electric Corporation Optoelectronic & Microwave Devices Laboratory |
| 9th Author's Name | S. Tsuji |
| 9th Author's Affiliation | Mitsubishi Electric Corporation High Frequency & Optical Semiconductor Div. |
| 10th Author's Name | T. Ishikawa |
| 10th Author's Affiliation | Mitsubishi Electric Corporation Optoelectronic & Microwave Devices Laboratory |
| Date | 1998/1/21 |
| Paper # | ICD97-201 |
| Volume (vol) | vol.97 |
| Number (no) | 480 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |