Presentation | 1998/1/21 Low Distortion Design of High Efficiency Power GaAs FETs for L-band Satellite Communication System Applications Hiroaki Tsutsui, Isao Takenaka, Hidemasa Takahashi, Kazunori Asano, Masaaki Kuzuhara, |
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PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | We have developed a GaAs FET power amplifier that demonstrates a high power-added efficiency of 68% with 17.1W output power and a 16dB linear gain at 1.5GHz. The developed 17W amplifier also exhibited state of the art low distortion characteristics of less than -21dBc NPR at the 5dB-output power back-off point from 2dB-gain compression point. The results indicated that the absolute value of bias circuit impedunce in the low frequency range influences the distortion characteristics of the amplifier. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | GaAsFET / power amplifier / low distortion / IM3 / NPR / bias circuit |
Paper # | ICD97-200 |
Date of Issue |
Conference Information | |
Committee | ICD |
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Conference Date | 1998/1/21(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | |
Chair | |
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Paper Information | |
Registration To | Integrated Circuits and Devices (ICD) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Low Distortion Design of High Efficiency Power GaAs FETs for L-band Satellite Communication System Applications |
Sub Title (in English) | |
Keyword(1) | GaAsFET |
Keyword(2) | power amplifier |
Keyword(3) | low distortion |
Keyword(4) | IM3 |
Keyword(5) | NPR |
Keyword(6) | bias circuit |
1st Author's Name | Hiroaki Tsutsui |
1st Author's Affiliation | ULSI Device Development Laboratories, NEC Corporation() |
2nd Author's Name | Isao Takenaka |
2nd Author's Affiliation | ULSI Device Development Laboratories, NEC Corporation |
3rd Author's Name | Hidemasa Takahashi |
3rd Author's Affiliation | ULSI Device Development Laboratories, NEC Corporation |
4th Author's Name | Kazunori Asano |
4th Author's Affiliation | ULSI Device Development Laboratories, NEC Corporation |
5th Author's Name | Masaaki Kuzuhara |
5th Author's Affiliation | ULSI Device Development Laboratories, NEC Corporation |
Date | 1998/1/21 |
Paper # | ICD97-200 |
Volume (vol) | vol.97 |
Number (no) | 480 |
Page | pp.pp.- |
#Pages | 5 |
Date of Issue |